公开(公告)号：US06740853B1

公开(公告)日：2004-05-25

申请号：US10088504

申请日：2002-09-17

Applicant: Wayne L. Johnson ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Eric J. Strang

IPC: H05B368

CPC classification number: H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6831

Abstract: A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

Abstract translation: 用于在等离子体处理期间保持衬底（例如，晶片或LCD面板）的衬底保持器。 衬底保持器是一堆处理元件，每个处理元件执行至少一个功能。 这些元件包括静电卡盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。 每个元件被设计成与处理系统的特性匹配，例如通过在正常处理期间基于衬底的热损失特性施加热量。 集成设计允许对操作条件的精确控制，包括但不限于快速加热和快速冷却基板。

公开(公告)号：US06960887B2

公开(公告)日：2005-11-01

申请号：US10359556

申请日：2003-02-07

Applicant: Eric J. Strang ,  Wayne L. Johnson ,  Robert G. Hostetler ,  Steven T. Fink

Inventor： Eric J. Strang ,  Wayne L. Johnson ,  Robert G. Hostetler ,  Steven T. Fink

IPC: H01J37/32 ,  H01J7/24 ,  H01L21/302 ,  H05B31/26

CPC classification number: H01J37/32449 ,  H01J37/32623 ,  H01J37/32834

Abstract: A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.

Abstract translation: 等离子体反应器或真空处理装置设置有孔板组件。 孔板组件包括上板和下板。 每个板配置有通孔。 上下孔板可独立地相对于彼此旋转。 板在真空室内布置有排放反应器，使得卡盘组件设置在孔板组件的开口内。 孔板组件进一步构造成具有与真空室的内壁形状基本匹配的周边形状。

公开(公告)号：US06949722B2

公开(公告)日：2005-09-27

申请号：US10630783

申请日：2003-07-31

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  H05B3/68

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

公开(公告)号：US07166233B2

公开(公告)日：2007-01-23

申请号：US10076099

申请日：2002-02-15

Applicant: Wayne L. Johnson ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Eric J. Strang

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32137 ,  H01L21/31116

Abstract: In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.

Abstract translation: 在用于通过以下方式对反应器室中的衬底进行等离子体辅助处理的方法：将至少一种工艺气体引入反应器室; 以及通过在所述室内建立RF电磁场并且允许所述场与所述工艺气体相互作用来在所述反应器室内产生等离子体，所述电磁场被控制为具有能够在至少两个值之间周期性变化的能级，所述至少两个值足以维持 等离子体，使得每个能级值与在衬底上分别不同的处理过程的性能相关联。

公开(公告)号：US07075031B2

公开(公告)日：2006-07-11

申请号：US10399981

申请日：2001-10-24

Applicant: Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Andrej Mitrovic ,  Jim Fordemwalt ,  Wayne L. Johnson

IPC: B23K9/00

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109

Abstract: A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Abstract translation: 一种用于控制电极（4）的温度的方法和结构。 在蚀刻第一晶片之前对电极进行加热，并保持硅电极的（时间上）固定和（空间上）均匀的温度。 电阻式加热器元件（1）嵌入电极（3）的外壳内或形成电极的一部分。 电阻加热器元件形成多区类型的加热器，以使温度不均匀化最小化。 电阻加热器元件被分成多个区域，其中可以单独地调节每个区域的功率，从而实现电极所需的温度均匀性。 将电极预热到适当的工作温度，消除半导体晶片的“第一晶片效应”和非均匀蚀刻。

公开(公告)号：US07019253B2

公开(公告)日：2006-03-28

申请号：US10229036

申请日：2002-08-28

Applicant: Wayne L. Johnson ,  Thomas H. Windhorn ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Thomas H. Windhorn ,  Eric J. Strang

IPC: B23K10/00

CPC classification number: H01J37/321 ,  H05H1/46

Abstract: Apparatus including a chamber and a coil system for converting a field-generating current into a RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the RF magnetic field to create a plasma. The plasma is contained within a cylindrical region enclosed by the chamber, which region has a longitudinal center axis, and the region is considered to be made up of a plurality of annular zones concentric with the center axis and disposed at respectively different distances from the center axis. The coil system is composed of: a plurality of individual coils each positioned and dimensioned to produce a RF magnetic field which predominantly influences a respective annular zone.

公开(公告)号：US07311782B2

公开(公告)日：2007-12-25

申请号：US11103542

申请日：2005-04-12

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: C23C16/00 ,  H01L21/00

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract translation: 一种用于在半导体制造期间对衬底进行热处理的方法和装置。 该方法包括使用加热组件将衬底加热至预定温度，使用冷却组件将衬底冷却至预定温度，该冷却组件位于加热组件和冷却组件之间提供导热区域，并调节热电导率 导电区域以帮助加热和冷却基板。 该装置包括加热组件，冷却组件，其定位成使得在加热和冷却组件之间设置热传导区域，以及用于调节导热区域的热导率的结构或构造。

公开(公告)号：US06913703B2

公开(公告)日：2005-07-05

申请号：US10291763

申请日：2002-11-12

Applicant: Eric J. Strang ,  Thomas F. A. Bibby, Jr. ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Thomas F. A. Bibby, Jr. ,  Wayne L. Johnson

IPC: H01L21/3065 ,  H01J37/32 ,  H01B13/00

CPC classification number: H01J37/32009 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32862

Abstract: A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.

Abstract translation: 一种在能够支撑反应室（16）中的等离子体（20,120）的等离子体处理系统（6）中调节电极组件（10）的相对厚度的方法。 电极组件布置在反应器室中并且包括至少一个电极，其具有可由至少一个牺牲保护板（100）限定的下表面。 电极具有由在反应器室中执行的等离子体处理操作产生的不均匀的厚度。 该方法包括形成等离子体（120）的步骤，该等离子体（120）被设计成选择性地蚀刻下表面上的至少一个电极，随后借助等离子体蚀刻电极以减小厚度不均匀性（T（X ，Z））。 可以在加工工件期间以及在电极的修复等离子体蚀刻期间使用声换能器（210）在原位测量电极的厚度。

公开(公告)号：US06713969B2

公开(公告)日：2004-03-30

申请号：US10355173

申请日：2003-01-31

Applicant: Murray Sirkis ,  Wayne L. Johnson ,  Andrej Mitrovic ,  Eric J. Strang

Inventor： Murray Sirkis ,  Wayne L. Johnson ,  Andrej Mitrovic ,  Eric J. Strang

IPC: H01J724

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H05H1/0062

Abstract: A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Abstract translation: 一种等离子体处理系统，包括等离子体室，可移动地安装在等离子体室内的开放式谐振器和检测器。 开放谐振器产生微波信号，并且检测器检测微波信号并测量等离子体场内的信号路径上的平均电子等离子体密度。 或者，等离子体处理系统包括等离子体室，设置在等离子体室内的多个开放谐振器，多个检测器和处理器。 处理器被配置为从对应于多个开放谐振器的位置的检测器接收多个平均电子等离子体密度测量值。

公开(公告)号：US07718032B2

公开(公告)日：2010-05-18

申请号：US11425883

申请日：2006-06-22

Applicant: Martin Kent ,  Eric J. Strang

Inventor： Martin Kent ,  Eric J. Strang

IPC: C23F1/00

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在包括表面温度和气体压力的受控条件下暴露于包括HF和任选的NH 3的气态化学物质。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。