Invention Grant
- Patent Title: Multi-sensing level MRAM structures
- Patent Title (中): 多感测级MRAM结构
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Application No.: US10685824Application Date: 2004-08-23
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Publication No.: US07166881B2Publication Date: 2007-01-23
- Inventor: Wen Chin Lin , Denny D. Tang , Chien-Chung Hung
- Applicant: Wen Chin Lin , Denny D. Tang , Chien-Chung Hung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.
Public/Granted literature
- US20060038210A1 Multi-sensing level MRAM structures Public/Granted day:2006-02-23
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