公开(公告)号：US20100321974A1

公开(公告)日：2010-12-23

申请号：US12564925

申请日：2009-09-23

申请人： Chien-Chung Hung ,  Ching-Hsiang Tsai

发明人： Chien-Chung Hung ,  Ching-Hsiang Tsai

IPC分类号： G11C19/00 ,  G11C7/00 ,  G11C11/00

CPC分类号： G11C19/0808 ,  G11C7/02 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.

摘要翻译： 提供包括至少一个磁道的磁移位寄存器。 每个磁道具有由多个连续磁畴形成的至少一组突发数据。 每个磁畴具有对应于存储的数据的磁化方向。 具有对应于给定存储数据的给定磁化方向的磁头磁畴被设置在该组脉冲串数据的最前面，并且磁头磁畴和突发数据组形成数据存储单元。 提供一种读取磁移位寄存器的方法。

公开(公告)号：US07843719B2

公开(公告)日：2010-11-30

申请号：US12365847

申请日：2009-02-04

申请人： Chien-Chung Hung ,  Kuei-Hung Shen

发明人： Chien-Chung Hung ,  Kuei-Hung Shen

IPC分类号： G11C11/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

摘要翻译： 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

公开(公告)号：US20100118583A1

公开(公告)日：2010-05-13

申请号：US12365847

申请日：2009-02-04

申请人： Chien-Chung Hung ,  Kuei-Hung Shen

发明人： Chien-Chung Hung ,  Kuei-Hung Shen

IPC分类号： G11C19/00 ,  G11C11/416

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

摘要翻译： 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

公开(公告)号：US20100080034A1

公开(公告)日：2010-04-01

申请号：US12272760

申请日：2008-11-17

申请人： Chien-Chung Hung

发明人： Chien-Chung Hung

IPC分类号： G11C19/02

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A magnetic shift register includes at least a magnetic memory track of which several magnetic walls separate the memory track into multiple magnetic domains to serve as magnetic binary memory cells. The magnetic memory track includes multiple data regions. Each data region has multiple of the magnetic binary memory cells for storing bit data at a quiescent state and registering at least one of the bit data shifted from the adjacent data region at a shifting state. Wherein, the bit data of the magnetic binary memory cells is shifted between the adjacent two data region under an operation current.

摘要翻译： 磁移位寄存器包括至少一个磁存储器轨道，其中几个磁性壁将存储器轨迹分离成多个磁畴以用作磁二进制存储单元。 磁存储器轨道包括多个数据区域。 每个数据区域具有多个磁性二进制存储单元，用于存储处于静止状态的位数据，并且以移位状态登记从相邻数据区移位的位数据中的至少一个。 其中，在操作电流下，磁性二进制存储单元的位数据在相邻的两个数据区之间移位。

公开(公告)号：US07577019B2

公开(公告)日：2009-08-18

申请号：US11853818

申请日：2007-09-12

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  Y10S977/935

摘要： A multi-bit magnetic memory cell in a stacked structure controlled by at least one read bit line and one read word line is provided. The multi-bit magnetic memory cell includes at least two magnetic memory units and a switching device. Each magnetic memory unit has a magneto-resistance value and at least the two magnetic memory units are stacked to form a circuit of serial connection or parallel connection. The circuit and the read bit line are connected. The switching device is connected to the circuit, wherein the switching device is controlled by the read word line to be conducting or non-conducting so as to connect the circuit with a ground voltage. Furthermore, a plurality of the multi-bit magnetic cells is used to form a magnetic memory device.

摘要翻译： 提供了由至少一个读位线和一个读字线控制的堆叠结构中的多位磁存储单元。 多位磁存储单元包括至少两个磁存储单元和开关器件。 每个磁存储器单元具有磁阻值，并且至少两个磁存储器单元被堆叠以形成串联或并联的电路。 电路和读位线相连。 开关装置连接到电路，其中开关装置由读取的字线控制为导通或不导通，以将电路与接地电压连接。 此外，使用多个多位磁单元来形成磁存储器件。

公开(公告)号：US07554836B2

公开(公告)日：2009-06-30

申请号：US11966240

申请日：2007-12-28

申请人： Young-Shying Chen ,  Chung-Chih Wang ,  Chia-Pao Chang ,  Chien-Chung Hung

发明人： Young-Shying Chen ,  Chung-Chih Wang ,  Chia-Pao Chang ,  Chien-Chung Hung

IPC分类号： G11C17/00

CPC分类号： G11C11/16 ,  G11C11/1693

摘要： A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

摘要翻译： 用于磁性随机存取存储器的控制电路中的数据写入配置有第一晶体管，连接到第一晶体管的第二晶体管，连接到第一晶体管的传输栅极，具有连接到第一晶体管的两个输入端的比较器， 电容器，其一端连接到第一晶体管，另一端连接到电源或地，以及逻辑电路，其一端连接到比较器的输出端，另一端接收要写入的数据。

公开(公告)号：US20090040663A1

公开(公告)日：2009-02-12

申请号：US12248522

申请日：2008-10-09

申请人： Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

发明人： Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/1693 ,  G11B5/66 ,  G11C11/1659 ,  G11C11/1675

摘要： A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane.

摘要翻译： 磁存储器包括堆叠，第一写入线和第二写入线。 堆叠包括磁性固定层，隧道势垒绝缘层和无磁性层，以形成磁性隧道结（MTJ）。 MTJ具有容易的轴。 第一根电线被放置在堆叠下方。 第一写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。 第二个写入线设置在堆叠上方。 第二写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。

公开(公告)号：US20090034322A1

公开(公告)日：2009-02-05

申请号：US11946025

申请日：2007-11-27

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  Y10S977/935

摘要： A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.

摘要翻译： 磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。 多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。 每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。 每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。 易轴和第一方向写电流线形成约45°的包含角度。 读位线电路连接到存储器单元的第一端。 读取字线电路连接到存储器单元的第二端子。

公开(公告)号：US20090010087A1

公开(公告)日：2009-01-08

申请号：US11966240

申请日：2007-12-28

申请人： Young-Shying CHEN ,  Chung-Chih WANG ,  Chia-Pao CHANG ,  Chien-Chung HUNG

发明人： Young-Shying CHEN ,  Chung-Chih WANG ,  Chia-Pao CHANG ,  Chien-Chung HUNG

IPC分类号： G11C7/02

CPC分类号： G11C11/16 ,  G11C11/1693

摘要： A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

摘要翻译： 用于磁性随机存取存储器的控制电路中的数据写入配置有第一晶体管，连接到第一晶体管的第二晶体管，连接到第一晶体管的传输栅极，具有连接到第一晶体管的两个输入端的比较器， 电容器，其一端连接到第一晶体管，另一端连接到电源或地，以及逻辑电路，其一端连接到比较器的输出端，另一端接收要写入的数据。

公开(公告)号：US20070195593A1

公开(公告)日：2007-08-23

申请号：US11459029

申请日：2006-07-21

申请人： Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

发明人： Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A structure of magnetic memory cell, suitable for a magnetic memory device with toggle mode access operation is provided, which includes a magnetic pinned stacked layer as a portion of a substrate structure; a tunnel barrier layer disposed on the magnetic pinned stacked layer; a magnetic free stacked layer disposed on the tunnel barrier layer; a magnetic bias stacked layer disposed on the magnetic free stacked layer, wherein the magnetic bias stacked layer applies a compensative magnetic field to the magnetic free stacked layer, so as to move a toggle operation region towards a magnetic zero point. Further, the magnetic field effect of the magnetic bias stacked layer also includes reducing a direct mode region adjacent to the toggle operation region.

摘要翻译： 提供了适用于具有拨动模式存取操作的磁存储器件的磁存储单元的结构，其包括作为衬底结构的一部分的磁性固定堆叠层; 设置在所述磁性钉扎层叠层上的隧道势垒层; 设置在隧道势垒层上的无磁性堆叠层; 设置在无磁性层叠层上的磁偏置堆叠层，其中所述磁偏置堆叠层向所述无磁性堆叠层施加补偿磁场，以将触发操作区域朝向磁零点移动。 此外，磁偏置堆叠层的磁场效应还包括减少与肘节操作区域相邻的直接模式区域。