发明授权
- 专利标题： Plasma treatment for surface of semiconductor device
- 专利标题（中）： 半导体器件表面等离子体处理
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申请号： US10987790申请日： 2004-11-12
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公开(公告)号： US07176130B2公开(公告)日： 2007-02-13
- 发明人: Jin Miao Shen , Brian J. Fisher , Mark D. Hall , Kurt H. Junker , Vikas R. Sheth , Mehul D. Shroff
- 申请人： Jin Miao Shen , Brian J. Fisher , Mark D. Hall , Kurt H. Junker , Vikas R. Sheth , Mehul D. Shroff
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Daniel D. Hill; Joanna G. Chiu
- 主分类号： H01L21/441
- IPC分类号： H01L21/441
摘要：
A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.
公开/授权文献
- US20060105568A1 Plasma treatment for surface of semiconductor device 公开/授权日：2006-05-18