公开(公告)号：US07176130B2

公开(公告)日：2007-02-13

申请号：US10987790

申请日：2004-11-12

申请人： Jin Miao Shen ,  Brian J. Fisher ,  Mark D. Hall ,  Kurt H. Junker ,  Vikas R. Sheth ,  Mehul D. Shroff

发明人： Jin Miao Shen ,  Brian J. Fisher ,  Mark D. Hall ,  Kurt H. Junker ,  Vikas R. Sheth ,  Mehul D. Shroff

IPC分类号： H01L21/441

CPC分类号： H01L21/32139 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/3105 ,  H01L21/31612

摘要： A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.

摘要翻译： 一种用于形成半导体器件（10）的方法包括在半导体器件（10）上形成有机抗反射涂层（OARC）层（18）。 在OARC层（18）上形成四乙基原硅酸盐（TEOS）层（20）。 TEOS层（20）在至多约300摄氏度的温度下暴露于基于氧的等离子体。 在替代实施例中，首先将TEOS层（20）暴露于基于氧的等离子体之前的氮基等离子体。 光致抗蚀剂层（22）形成在TEOS层（20）上并被图案化。 在施加光致抗蚀剂之前，通过将氧基等离子体和氮基等离子体施加到TEOS层（20）上，减少了图案缺陷。

公开(公告)号：US20080197450A1

公开(公告)日：2008-08-21

申请号：US12103550

申请日：2008-04-15

申请人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

发明人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

IPC分类号： H01L23/525

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/903 ,  H01L2924/00

摘要： A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1±0.4, and the ratio of x to y in SixNy is in a range of about 0.75±0.225.

摘要翻译： 具有下金属电极的金属对金属反熔丝，设置在下金属电极上的下薄增粘层，设置在薄粘附促进层上的无定形碳反应熔剂层，设置在所述反熔丝之上的上薄增粘层 材料层和上部金属电极。 薄粘附促进层的厚度约为2埃至20埃，并且来自选自包含Si x Si x Si和Si x的组的材料， / SUB> Y 。 Si x Si x y中的x与y的比率在约1±0.4的范围内，并且Si x x y中的x与y的比例， SUB> N 在约0.75±0.225的范围内。

公开(公告)号：US07358589B1

公开(公告)日：2008-04-15

申请号：US11210492

申请日：2005-08-23

申请人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

发明人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

IPC分类号： H01L29/00

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/903 ,  H01L2924/00

摘要： A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/−0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/−0.225.

摘要翻译： 具有下金属电极的金属对金属反熔丝，设置在下金属电极上的下薄增粘层，设置在薄粘附促进层上的无定形碳反应熔剂层，设置在所述反熔丝之上的上薄增粘层 材料层和上部金属电极。 薄粘附促进层的厚度约为2埃至20埃，并且来自选自包含Si x Si x Si和Si x的组的材料， / SUB> Y 。 Si x x Y y中的x与y的比率在约1 +/- 0.4的范围内，并且Si x N 在约0.75 +/- 0.225的范围内。

公开(公告)号：US06965156B1

公开(公告)日：2005-11-15

申请号：US10331144

申请日：2002-12-27

申请人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

发明人： Frank W. Hawley ,  A. Farid Issaq ,  John L. McCollum ,  Shubhra M. Gangopadhyay ,  Jorge A. Lubguban ,  Jin Miao Shen

IPC分类号： H01L23/525 ,  H01L29/00

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/903 ,  H01L2924/00

摘要： A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/−0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/−0.225.

摘要翻译： 具有下金属电极的金属对金属反熔丝，设置在下金属电极上的下薄增粘层，设置在薄粘附促进层上的无定形碳反应熔剂层，设置在所述反熔丝之上的上薄增粘层 材料层和上部金属电极。 薄粘附促进层的厚度约为2埃至20埃，并且来自选自包含Si x Si x Si和Si x的组的材料， / SUB> Y 。 Si x x Y y中的x与y的比率在约1 +/- 0.4的范围内，并且Si x N 在约0.75 +/- 0.225的范围内。