Invention Grant
- Patent Title: Method for multiple spacer width control
- Patent Title (中): 多间隔宽度控制方法
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Application No.: US10435009Application Date: 2003-05-09
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Publication No.: US07176137B2Publication Date: 2007-02-13
- Inventor: Baw-Ching Perng , Yih-Shung Lin , Ming-Ta Lei , Ai-Sen Liu , Chia-Hui Lin , Cheng-Chung Lin
- Applicant: Baw-Ching Perng , Yih-Shung Lin , Ming-Ta Lei , Ai-Sen Liu , Chia-Hui Lin , Cheng-Chung Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a first plurality of gate structures; blanket depositing a first dielectric layer over the first plurality of gate structures; blanket depositing a second dielectric layer over the first dielectric layer; etching back through a thickness of the first and second dielectric layers; blanket depositing a first photoresist layer to cover the first plurality and patterning to selectively expose at least a second plurality of gate structures; isotropically etching the at least a second plurality of gate structures for a predetermined time period to selectively etch away a predetermined portion of the first dielectric layer; and, selectively etching away the second dielectric layer to leave gate structures comprising a plurality of associated sidewall spacer widths.
Public/Granted literature
- US20040222182A1 Method for multiple spacer width control Public/Granted day:2004-11-11
Information query
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