发明授权
US07177186B2 High bandwidth datapath load and test of multi-level memory cells
失效
高带宽数据路径负载和多级存储单元的测试
- 专利标题: High bandwidth datapath load and test of multi-level memory cells
- 专利标题(中): 高带宽数据路径负载和多级存储单元的测试
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申请号: US11391509申请日: 2006-03-28
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公开(公告)号: US07177186B2公开(公告)日: 2007-02-13
- 发明人: Daniel R. Elmhurst , Karthikeyan Ramamurthi , Quan H. Ngo , Robert L. Melcher
- 申请人: Daniel R. Elmhurst , Karthikeyan Ramamurthi , Quan H. Ngo , Robert L. Melcher
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Trop, Pruner & Hu, P.C.
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
An apparatus and technique for testing of multi-level cells (MLC) in a memory storage device using a high bandwidth data path architecture. The technique includes hardware for obtaining a first data and a second data from a multilevel cell memory. The first data is different from the second data. The first data and second data are compared and, based at least in part on this comparison, the multilevel cell memory is programmed. Programming the multilevel cell memory includes accessing memory cells in the multilevel cell memory and determining the number of bits per memory cell of the first data that need programming.
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