发明授权
- 专利标题: Magnetic memory device
- 专利标题(中): 磁存储器件
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申请号: US11253696申请日: 2005-10-20
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公开(公告)号: US07180773B2公开(公告)日: 2007-02-20
- 发明人: Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
- 申请人: Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2004-306580 20041021
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; G11C11/00
摘要:
A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
公开/授权文献
- US20060087874A1 Magnetic memory device 公开/授权日:2006-04-27
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