发明授权
US07187615B2 Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line
失效
选择性地激活由行地址启用的字线段和具有字线的部分激活命令的半导体存储器件的方法
- 专利标题： Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line
- 专利标题（中）： 选择性地激活由行地址启用的字线段和具有字线的部分激活命令的半导体存储器件的方法
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申请号： US10943514申请日： 2004-09-17
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公开(公告)号： US07187615B2公开(公告)日： 2007-03-06
- 发明人: Min-Sang Park , Yu-Lim Lee , Seong-Jin Jang
- 申请人： Min-Sang Park , Yu-Lim Lee , Seong-Jin Jang
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2003-0066984 20030926
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A method for activating a word line segment of a semiconductor memory selected based on a row address provided to the memory can include activating a first word line segment selected by a row address and a command type and avoiding activating a second word line segment selected by the row address. Related devices are also disclosed.
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