摘要:
A method for activating a word line segment of a semiconductor memory selected based on a row address provided to the memory can include activating a first word line segment selected by a row address and a command type and avoiding activating a second word line segment selected by the row address. Related devices are also disclosed.
摘要:
A method for activating a word line segment of a semiconductor memory selected based on a row address provided to the memory can include activating a first word line segment selected by a row address and a command type and avoiding activating a second word line segment selected by the row address. Related devices are also disclosed.
摘要:
A semiconductor memory device includes a plurality of banks. A data path may be divided into a read data path and a write data path, therefore, parallel processing of write and read commands are possible. The semiconductor memory device may include an address bank buffer, address buffer, column predecoder and/or a decoder. The semiconductor memory device may begin execution of a write command in a bank in one clock cycle and begin execution of a read command in the following clock cycle, therefore, bus efficiency is increased and/or write-to-read turn around time is reduced.
摘要:
A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is possible to reduce the size of a semiconductor chip.
摘要:
A multi-chip package includes a first die having temperature sensors and a second die. The first die generates temperature deviation information of m (m
摘要:
Provided is a circuit for setting an optimized condition of a semiconductor circuit including a fuse cut signal generator configured to generate a fuse cut signal in response to a first control signal, and a state setting circuit configured to generate an optimization signal in response to a plurality of state control signals and the fuse cut signal.
摘要:
Provided is a circuit for setting an optimized condition of a semiconductor circuit including a fuse cut signal generator configured to generate a fuse cut signal in response to a first control signal, and a state setting circuit configured to generate an optimization signal in response to a plurality of state control signals and the fuse cut signal.
摘要:
Provided is a data input circuit of a semiconductor memory device. The data input circuit includes: an input buffer that samples an external data signal in response to a data strobe signal and outputs a first-sampled signal; a first domain converter that samples the first-sampled signal in response to a first clock signal and outputs a second-sampled signal; and a second domain converter that samples the second-sampled signal in response to a second clock signal containing write command information.
摘要:
A liquid crystal display comprises a lower substrate, multiple seal patterns formed on the lower substrate and including spacers and sealant, and an upper substrate sealed by the multiple seal patterns. Spacers of one seal pattern, formed on wiring, of the multiple seal patterns comprise conductive spacers so that conductivity is improved while a cell gap between two substrates is stably maintained by sealing the substrates using a conductive seal pattern and a seal pattern for maintaining the gap. Furthermore, the liquid crystal display is capable of maintaining a cell gap between the two substrates more stably by forming black matrices on a front surface of the substrate in a pixel region of the liquid crystal display, thereby relieving a bump on the upper substrate.
摘要:
A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is possible to reduce the size of a semiconductor chip.