发明授权
- 专利标题: Stress-reduced layer system for use in storage capacitors
- 专利标题(中): 用于存储电容器的应力降低层系统
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申请号: US10780075申请日: 2004-02-17
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公开(公告)号: US07199414B2公开(公告)日: 2007-04-03
- 发明人: Matthias Goldbach , Bernhard Sell , Annette Sänger
- 申请人: Matthias Goldbach , Bernhard Sell , Annette Sänger
- 申请人地址: DE München
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE München
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权: DE10120053 20010424
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要:
The stress-reduced layer system has at least one first layer of polycrystalline or single-crystal semiconductor material, which adjoins a microcrystalline or amorphous, conducting or insulating second layer. The semiconductor layer is doped with at least two dopants of the same conductivity type, of which at least one is suitable for reducing mechanical stresses at the interface. The stress-reduced layer system, in a further embodiment, has at least one first layer of semiconductor material, conducting or insulating material and at least one conducting or insulating second layer. A further semiconductor layer, which is doped with at least one dopant that is suitable for reducing mechanical stresses at the interface between the second layer and the first layer, is arranged between the first layer and the second layer or it is applied to the surface of the first layer or the second layer that is opposite from the interface.