发明授权
- 专利标题： Method for manufacturing movable portion of semiconductor device
- 专利标题（中）： 制造半导体器件的可移动部分的方法
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申请号： US10936539申请日： 2004-09-09
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公开(公告)号： US07214625B2公开(公告)日： 2007-05-08
- 发明人: Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
- 申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
- 申请人地址： JP Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2003-318267 20030910; JP2003-324586 20030917
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L29/82
摘要：
A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.