公开(公告)号：US20050054153A1

公开(公告)日：2005-03-10

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

公开(公告)号：US07214625B2

公开(公告)日：2007-05-08

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

公开(公告)号：US20110244687A1

公开(公告)日：2011-10-06

申请号：US13073173

申请日：2011-03-28

申请人： Junji OOHARA ,  Kazushi Asami

发明人： Junji OOHARA ,  Kazushi Asami

IPC分类号： H01L21/306

CPC分类号： H01L21/30655 ,  H01J37/321 ,  H01J37/32972 ,  H01L22/26

摘要： In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.

摘要翻译： 在用于形成在衬底中具有M个不同宽度的沟槽的工艺中，交替执行钝化步骤和蚀刻步骤。 钝化步骤包括通过将在腔室中引入的气体转化为等离子体来在沟槽的底部沉积钝化层。 蚀刻步骤包括去除沟槽底部的钝化层并向底部施加反应离子蚀刻以增加沟槽的深度。 当去除具有第N个最小宽度的沟槽底部的钝化层时，蚀刻步骤还包括将反应离子蚀刻的能量设定为预定值。 该值允许具有第N个最小宽度的沟槽的蚀刻量等于或大于具有（N + 1）个最小宽度的沟槽的蚀刻量。

公开(公告)号：US08461052B2

公开(公告)日：2013-06-11

申请号：US13073173

申请日：2011-03-28

申请人： Junji Oohara ,  Kazushi Asami

发明人： Junji Oohara ,  Kazushi Asami

IPC分类号： H01L21/461

CPC分类号： H01L21/30655 ,  H01J37/321 ,  H01J37/32972 ,  H01L22/26

摘要： In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.

摘要翻译： 在用于形成在衬底中具有M个不同宽度的沟槽的工艺中，交替执行钝化步骤和蚀刻步骤。 钝化步骤包括通过将在腔室中引入的气体转化为等离子体来在沟槽的底部沉积钝化层。 蚀刻步骤包括去除沟槽底部的钝化层并向底部施加反应离子蚀刻以增加沟槽的深度。 当去除具有第N个最小宽度的沟槽底部的钝化层时，蚀刻步骤还包括将反应离子蚀刻的能量设定为预定值。 该值允许具有第N个最小宽度的沟槽的蚀刻量等于或大于具有（N + 1）个最小宽度的沟槽的蚀刻量。

公开(公告)号：US08610246B2

公开(公告)日：2013-12-17

申请号：US13084074

申请日：2011-04-11

申请人： Shinji Yoshihara ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

发明人： Shinji Yoshihara ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

IPC分类号： H01L29/00

CPC分类号： H01L21/6835 ,  H01F5/003 ,  H01F41/041 ,  H01F41/046 ,  H01L2924/0002 ,  H05K1/165 ,  H05K2201/09672 ,  H01L2924/00

摘要： In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

摘要翻译： 在具有在基板上具有线圈层部分的半导体器件的制造方法中，准备了具有平坦表面的两个支撑基板，并且在每个支撑基板的平坦表面上形成有部件。 该部件包括具有预定图案的布线部分和围绕布线部分的绝缘膜。 布线部分设置有从绝缘膜露出的连接部分。 线圈层部分通过在支撑基板的平坦表面彼此平行的状态下相对地并且将形成在支撑基板上的部件彼此相对并粘合而形成，同时施加压力。 通过连接部分连接布线部分，在线圈层部分中形成线圈。

公开(公告)号：US20110248380A1

公开(公告)日：2011-10-13

申请号：US13084074

申请日：2011-04-11

申请人： Shinji YOSHIHARA ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

发明人： Shinji YOSHIHARA ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

IPC分类号： H01L29/86 ,  H01L21/20

CPC分类号： H01L21/6835 ,  H01F5/003 ,  H01F41/041 ,  H01F41/046 ,  H01L2924/0002 ,  H05K1/165 ,  H05K2201/09672 ,  H01L2924/00

摘要： In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

摘要翻译： 在具有在基板上具有线圈层部分的半导体器件的制造方法中，准备了具有平坦表面的两个支撑基板，并且在每个支撑基板的平坦表面上形成有部件。 该部件包括具有预定图案的布线部分和围绕布线部分的绝缘膜。 布线部分设置有从绝缘膜露出的连接部分。 线圈层部分通过在支撑基板的平坦表面彼此平行的状态下相对地并且将形成在支撑基板上的部件彼此相对并粘合而形成，同时施加压力。 通过连接部分连接布线部分，在线圈层部分中形成线圈。

公开(公告)号：US06718824B2

公开(公告)日：2004-04-13

申请号：US10013508

申请日：2001-12-13

申请人： Takeshi Ito ,  Kazushi Asami ,  Tsuyoshi Fukada ,  Hirofumi Higuchi

发明人： Takeshi Ito ,  Kazushi Asami ,  Tsuyoshi Fukada ,  Hirofumi Higuchi

IPC分类号： G01P1500

CPC分类号： B81C1/00666 ,  B81B2201/025 ,  G01C19/5719 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828

摘要： A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.

摘要翻译： 半导体动态量传感器例如加速度传感器形成在具有活化层的SOI衬底和具有氧化膜的支撑层之间。 在激活层中形成传感器的结构。 在支撑层和氧化物膜中形成开口以暴露结构。 在该传感器中，在与氧化膜接触的一侧的活化层中形成应力层。 在面向开口的区域处去除应力层以防止结构弯曲。

公开(公告)号：US5575887A

公开(公告)日：1996-11-19

申请号：US409530

申请日：1995-03-24

申请人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

发明人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

IPC分类号： H05H1/46 ,  C23C14/40 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32697

摘要： A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.

摘要翻译： 公开了一种等离子体蚀刻方法，其可以通过高速蚀刻并且不损坏形成在基板表面上的元件部分而在基板上形成凹部和/或开口部。 在具有一个表面作为元件部分形成表面的半导体衬底上，并且其上具有作为蚀刻表面的绝缘膜的另一表面通过对反应性施加高频电力而通过蚀刻形成凹部和/或开口部分 气体并产生等离子体。 基板设置在具有接地电位的电极上，绝缘膜位于下侧，并且具有接地电位的导电部件材料设置在基板周围。 当导电部件材料的一端与基板的蚀刻表面的一侧接触时，在基板表面上产生的电荷移动到导电部件材料，并且基板的电位降低。

公开(公告)号：US20060213268A1

公开(公告)日：2006-09-28

申请号：US11384330

申请日：2006-03-21

申请人： Kazushi Asami ,  Yukihiro Takeuchi ,  Kenichi Yokoyama

发明人： Kazushi Asami ,  Yukihiro Takeuchi ,  Kenichi Yokoyama

IPC分类号： G01P15/00

CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0831

摘要： An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

摘要翻译： 加速度传感器包括：包括沿第一方向堆叠的支撑层和半导体层的半导体衬底; 可动电极和固定电极; 和沟槽。 可移动电极通过与第二方向一起夹住沟槽而分开面对固定电极。 沟槽在第二方向上具有检测距离。 当施加加速度时，可移动电极与第一方向一起可移动。 可动电极具有与支撑层分离的底部。 可动电极与第二方向的宽度小于固定电极的宽度。 可移动电极与第一方向的厚度小于固定电极的厚度。