利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

46 条记录 (耗时 0.027 秒)

    Method for manufacturing movable portion of semiconductor device
    1.
    发明申请
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US20050054153A1

    公开(公告)日：2005-03-10

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method for manufacturing movable portion of semiconductor device
    2.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US07214625B2

    公开(公告)日：2007-05-08

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    3.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Plasma etching method and device manufacturing method thereby
    8.
    发明授权
    Plasma etching method and device manufacturing method thereby 失效
    等离子体蚀刻方法及其制造方法

    公开(公告)号：US5575887A

    公开(公告)日：1996-11-19

    申请号：US409530

    申请日：1995-03-24

    申请人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

    发明人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

    IPC分类号： H05H1/46 ,  C23C14/40 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32697

    摘要： A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.

    摘要翻译： 公开了一种等离子体蚀刻方法，其可以通过高速蚀刻并且不损坏形成在基板表面上的元件部分而在基板上形成凹部和/或开口部。 在具有一个表面作为元件部分形成表面的半导体衬底上，并且其上具有作为蚀刻表面的绝缘膜的另一表面通过对反应性施加高频电力而通过蚀刻形成凹部和/或开口部分 气体并产生等离子体。 基板设置在具有接地电位的电极上，绝缘膜位于下侧，并且具有接地电位的导电部件材料设置在基板周围。 当导电部件材料的一端与基板的蚀刻表面的一侧接触时，在基板表面上产生的电荷移动到导电部件材料，并且基板的电位降低。

    Semiconductor sensor device and method of manufacturing the same
    9.
    发明授权
    Semiconductor sensor device and method of manufacturing the same 有权
    半导体传感器装置及其制造方法

    公开(公告)号：US06444543B2

    公开(公告)日：2002-09-03

    申请号：US09866709

    申请日：2001-05-30

    申请人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    发明人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    IPC分类号： H01L21301

    CPC分类号： B81C1/00896 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

    摘要翻译： 通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。 在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。 在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。 所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。 因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。