发明授权
- 专利标题： Method of etching high aspect ratio features
- 专利标题（中）： 蚀刻高宽比特征的方法
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申请号： US10492541申请日： 2002-10-31
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公开(公告)号： US07226868B2公开(公告)日： 2007-06-05
- 发明人: Aelan Mosden , Sandra Hyland , Minori Kajimoto
- 申请人： Aelan Mosden , Sandra Hyland , Minori Kajimoto
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 国际申请： PCT/US03/31607 WO 20021031
- 国际公布： WO03/037497 WO 20030508
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.
公开/授权文献
- US20040221797A1 Method of etching high aspect ratio features 公开/授权日：2004-11-11