发明授权
- 专利标题： Shallow trench isolation
- 专利标题（中）： 浅沟隔离
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申请号： US11485838申请日： 2006-07-12
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公开(公告)号： US07241665B2公开(公告)日： 2007-07-10
- 发明人: Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
- 申请人： Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
- 申请人地址： MY Kedah
- 专利权人： SilTerra Malaysia Sdn. Bhd.
- 当前专利权人： SilTerra Malaysia Sdn. Bhd.
- 当前专利权人地址： MY Kedah
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
公开/授权文献
- US20060258116A1 Shallow trench isolation 公开/授权日：2006-11-16
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