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公开(公告)号:US07241665B2
公开(公告)日:2007-07-10
申请号:US11485838
申请日:2006-07-12
申请人: Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
发明人: Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
IPC分类号: H01L21/76
CPC分类号: H01L21/823481 , H01L21/76232 , H01L21/823462
摘要: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
摘要翻译: 在半导体衬底上形成隔离结构的方法包括使用包括蚀刻剂气体和聚合物形成气体的工艺气体来打开覆盖衬底的衬垫氧化物层的一部分。 通过开口步骤曝光的基板的一部分被蚀刻以形成具有第一斜率和第二斜率的沟槽。 第一斜坡大于45度,第二坡度小于45度。 填充沟槽以形成隔离结构。
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公开(公告)号:US07091104B2
公开(公告)日:2006-08-15
申请号:US10351472
申请日:2003-01-23
申请人: Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Gie Lee , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
发明人: Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Gie Lee , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
IPC分类号: H01L21/76
CPC分类号: H01L21/823481 , H01L21/76232 , H01L21/823462
摘要: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
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