- 专利标题: Semiconductor device having nano-pillars and method therefor
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申请号: US11244516申请日: 2005-10-06
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公开(公告)号: US07241695B2公开(公告)日: 2007-07-10
- 发明人: Leo Mathew , Rajesh A. Rao , Ramachandran Muralidhar
- 申请人: Leo Mathew , Rajesh A. Rao , Ramachandran Muralidhar
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Daniel D. Hill; David G. Dolezal; Ranjeev Singh
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A semiconductor device includes a plurality of pillars formed from a conductive material. The pillars are formed by using a plurality of nanocrystals as a hardmask for patterning the conductive material. A thickness of the conductive material determines the height of the pillars. Likewise, a width of the pillar is determined by the diameter of a nanocrystal. In one embodiment, the pillars are formed from polysilicon and function as the charge storage region of a non-volatile memory cell having good charge retention and low voltage operation. In another embodiment, the pillars are formed from a metal and function as a plate electrode for a metal-insulator-metal (MIM) capacitor having an increased capacitance without increasing the surface area of an integrated circuit.