发明授权
- 专利标题: Semiconductor bonding pad structure
- 专利标题(中): 半导体焊盘结构
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申请号: US11432373申请日: 2006-05-12
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公开(公告)号: US07253531B1公开(公告)日: 2007-08-07
- 发明人: Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Ming-Ta Lei , Chin-Chiu Hsia
- 申请人: Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Ming-Ta Lei , Chin-Chiu Hsia
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/28
摘要:
The invention provides a bonding pad structure. At least one lower circuit layer is disposed overlying the substrate, wherein the lower circuit layer is a layout of circuit under pad. A top circuit layer is disposed overlying the lower circuit layer, wherein the top circuit layer comprises a top interconnect dielectric layer and a top interconnect pattern in the top interconnect dielectric layer. A top connecting layer is disposed overlying the top circuit layer, electrically connecting the top interconnect pattern. A top pad layer is disposed overlying the top connecting layer. A bonding ball is disposed overlying the top pad layer, wherein sides of the top interconnect pattern do not overlap a region extending inwardly and outwardly from a boundary of the bonding ball within distance of about 2.5μm.
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