发明授权
- 专利标题: Input matching circuit for multiband low noise amplifier
- 专利标题(中): 多频低噪声放大器输入匹配电路
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申请号: US11088591申请日: 2005-03-24
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公开(公告)号: US07253688B2公开(公告)日: 2007-08-07
- 发明人: Rahul Bhatia , Sang-Hyun Woo , Ji-Hoon Bang , Seong-Soo Lee , Chang-Ho Lee , Joy Laskar
- 申请人: Rahul Bhatia , Sang-Hyun Woo , Ji-Hoon Bang , Seong-Soo Lee , Chang-Ho Lee , Joy Laskar
- 申请人地址: KR US GA Atlanta
- 专利权人: Samsung Electronics Co., Ltd.,Georgia Tech Research Corporation
- 当前专利权人: Samsung Electronics Co., Ltd.,Georgia Tech Research Corporation
- 当前专利权人地址: KR US GA Atlanta
- 代理机构: The Farrell Law Firm
- 优先权: KR10-2004-0118153 20041231
- 主分类号: H03F3/191
- IPC分类号: H03F3/191 ; H03F1/22
摘要:
Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.
公开/授权文献
- US20050225397A1 Input matching circuit for multiband low noise amplifier 公开/授权日:2005-10-13