Wideband I/Q signal generation device
    2.
    发明授权
    Wideband I/Q signal generation device 有权
    宽带I / Q信号发生装置

    公开(公告)号:US07454185B2

    公开(公告)日:2008-11-18

    申请号:US11089219

    申请日:2005-03-24

    IPC分类号: H04B1/10

    摘要: An apparatus for generating an in-phase/quadrature-phase (I/Q) signal in a wireless transceiver is disclosed, including a local oscillator for generating an oscillation signal, and first and second mixers for mixing an oscillation signal with a transmission/reception signal to convert the transmission/reception signal into a baseband or high-frequency signal. The apparatus includes a phase locked circuit for controlling the local oscillator, and a polyphase filter installed between the local oscillator and the mixers, for separating the oscillation signal from the local oscillator into an I signal and a Q signal depending on a control signal from the phase locked circuit, and outputting the separated I and Q signals to the first and second mixers, respectively.

    摘要翻译: 公开了一种用于在无线收发机中产生同相/正交相(I / Q)信号的装置,包括用于产生振荡信号的本地振荡器,以及用于将振荡信号与发送/接收混合的第一和第二混频器 信号将发送/接收信号转换为基带或高频信号。 该装置包括用于控制本地振荡器的锁相电路和安装在本地振荡器和混频器之间的多相滤波器,用于将振荡信号与本地振荡器分离成I信号和Q信号,这取决于来自 并且将分离的I和Q信号分别输出到第一和第二混频器。

    Predistorter for power amplifier
    4.
    发明授权
    Predistorter for power amplifier 有权
    功率放大器预失真器

    公开(公告)号:US07408408B2

    公开(公告)日:2008-08-05

    申请号:US11185107

    申请日:2005-07-20

    IPC分类号: H03F1/26

    CPC分类号: H03F1/3276

    摘要: A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.

    摘要翻译: 一种预失真器,其将支持多模和多频带(频带)的系统中的功率放大器的非线性线性化。 预失真器包括场效应晶体管,阻抗变换单元,第一电感器,第一电容器和第二电容器。 场效应晶体管具有连接到地并且使用可变栅极偏置电压的源极。 阻抗变换单元连接到场效应晶体管的漏极,以进行阻抗变换。 第一电感器连接在阻抗变换单元和提供给场效应晶体管的电压之间。 第一电容器连接在电源输入端子和阻抗变换单元之间。 第二电容器连接在电力输出端子和阻抗变换单元之间。

    Frequency mixing apparatus
    5.
    发明授权
    Frequency mixing apparatus 有权
    混频装置

    公开(公告)号:US07113008B2

    公开(公告)日:2006-09-26

    申请号:US11222011

    申请日:2005-09-08

    IPC分类号: H03B19/00

    CPC分类号: H03D7/125

    摘要: A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.

    摘要翻译: 提供了一种混频装置。 在频率混合装置中,PMOS晶体管以共源共栅配置耦合到NMOS晶体管,并且LO信号施加到PMOS和NMOS晶体管的体积,使得施加到其栅极的输入信号与LO信号混合。 通过将LO信号施加到体积而产生的晶体管的大块和栅极之间的高隔离防止了LO信号的泄漏,从而减小了DC偏移电压。 这使得频率混合适用于DCR。 另外,由于与逆变器配置相似的级联配置,所以可将混频装置并入SDR应用中的MODEM的FPGA中。 基于阈值电压的切换的频率混合降低了噪声因子,并且能够在低电源电压范围内进行频率混合,从而降低功耗。

    Tunable active inductor
    6.
    发明申请
    Tunable active inductor 有权
    可调谐有源电感

    公开(公告)号:US20060170523A1

    公开(公告)日:2006-08-03

    申请号:US11141123

    申请日:2005-05-31

    IPC分类号: H03H11/00

    CPC分类号: H03H11/50 H03H11/48

    摘要: An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.

    摘要翻译: 公开了一种通过将可调谐反馈电阻器施加到共源共栅接地有源电感器来调谐自谐振频率,电感,Q因子和峰值Q频率的有源电感器。 可调谐有源电感器包括具有连接到电源电压的源极和连接到第一偏置电压的栅极的第一晶体管; 第二晶体管,具有连接到所述第一晶体管的漏极的漏极和连接到第二偏置电压的栅极; 具有连接到所述第二晶体管的源极的漏极和连接到接地电压的源极的第三晶体管; 具有连接到第三晶体管的栅极的漏极的第四晶体管,连接到接地电压的源极和连接到第三偏置电压的栅极; 第五晶体管,其源极连接到第四晶体管的漏极,漏极连接到电源电压。

    Input matching circuit for multiband low noise amplifier
    7.
    发明申请
    Input matching circuit for multiband low noise amplifier 失效
    多频低噪声放大器输入匹配电路

    公开(公告)号:US20050225397A1

    公开(公告)日:2005-10-13

    申请号:US11088591

    申请日:2005-03-24

    摘要: Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.

    摘要翻译: 提供了一种包括第一晶体管,输入匹配电路和第一电容器的多频带低噪声放大器。 第一晶体管包括电连接到第一电源,接地发射极和与第一电感器的另一端连接的基极的集电极,第一电感器的一端作为低噪声放大器的输入端。 输入匹配电路连接在第一晶体管的集电极和基极之间。 第一个电容连接到第一个transistior的收集器。 输入匹配电路包括变容二极管。 输入匹配电路包括连接到变容二极管的第二电容器。 输入匹配电路包括连接到变容二极管的第一电阻器。 在多频带低噪声放大器中,具有可变电容的变容二极管安装在输入端,从而通过少量的偏置电压控制容易地执行频带切换并且最小化可能由控制信号引起的噪声。

    Direct conversion transceiver capable of reducing DC offset using multichip module
    8.
    发明授权
    Direct conversion transceiver capable of reducing DC offset using multichip module 有权
    直接转换收发器能够减少使用多芯片模块的直流偏移

    公开(公告)号:US06944436B2

    公开(公告)日:2005-09-13

    申请号:US10216899

    申请日:2002-08-13

    摘要: A direct conversion transceiver capable of reducing a DC offset, using a multi-chip module is provided. In the transceiver, a mixer and an element constituting a local oscillator are positioned above a shielding ground surface, and an interconnection connecting the mixer and the element constituting the local oscillator are positioned below the shielding ground surface. The transceiver is formed as a multi-chip module and thus its size is not bigger than a one-chip direct conversion receiver and advantageous in that its size and manufacturing costs are less than a general direct conversion receiver that additionally includes a DC offset cancellation circuit or an off-chip type oscillator for reducing a DC offset.

    摘要翻译: 提供了一种使用多芯片模块来减少DC偏移的直接转换收发器。 在收发器中,混合器和构成本地振荡器的元件位于屏蔽地表面上方,并且连接混合器和构成本地振荡器的元件的互连件位于屏蔽地表面下方。 收发器形成为多芯片模块,因此其尺寸不大于单芯片直接转换接收机,并且其优点在于其尺寸和制造成本小于通用直接转换接收机,其另外包括DC偏移消除电路 或用于减小DC偏移的片外型振荡器。

    Apparatus for generating remote plasma
    9.
    发明授权
    Apparatus for generating remote plasma 有权
    用于产生远程等离子体的装置

    公开(公告)号:US08207470B2

    公开(公告)日:2012-06-26

    申请号:US12547163

    申请日:2009-08-25

    IPC分类号: B23K10/00

    摘要: Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

    摘要翻译: 提供一种用于产生远程等离子体的装置,其可以通过防止偏置电极处的电弧来提高薄膜质量。 该装置包括安装在室的上部内的射频(RF)电极,与RF电极分开安装的偏置电极,并且包括多个通过等离子体通过的通孔,其中偏置功率被提供给偏置 电极,形成在RF电极和偏置电极之间的等离子体产生单元,其中等离子体气体被供应到等离子体产生单元,以及接地电极,安装在偏置电极之下并与偏置电极隔开,并且包括对应于等离子体的等离子体通孔 偏置电极的通孔,其中周期性地具有第一电压电平的第二电压电平的脉冲DC偏压施加到偏置电极。

    CMOS mixer for use in direct conversion receiver
    10.
    发明授权
    CMOS mixer for use in direct conversion receiver 有权
    CMOS调音台用于直接转换接收机

    公开(公告)号:US07449934B2

    公开(公告)日:2008-11-11

    申请号:US11585465

    申请日:2006-10-24

    IPC分类号: G06F7/44

    摘要: Provided is a mixer for use in a direct conversion receiver. The mixer includes Field Effect Transistors (FETs), a current source (IBias), two load resistors (RLoad), another FET, and two inductors L1 and L2. The FET M21 constitutes a current bleeding circuitry and the other components except for the two inductors L1 and L2 constitute a so-called Gilbert cell mixer.

    摘要翻译: 提供一种用于直接转换接收机的混频器。 混频器包括场效应晶体管(FET),电流源(IBias),两个负载电阻(RLoad),另一个FET和两个电感器L 1和L 2。 FET M 21构成电流泄放电路,除了两个电感器L 1和L 2之外的其它部件构成所谓的吉尔伯特细胞混合器。