Invention Grant
US07265431B2 Imageable bottom anti-reflective coating for high resolution lithography 有权
可成像底部抗反射涂层,用于高分辨率光刻

Imageable bottom anti-reflective coating for high resolution lithography
Abstract:
A semiconductor wafer may be coated with an imageable anti-reflective coating. As a result, the coating may be removed using the same techniques used to remove overlying photoresists. This may overcome the difficulty of etching anti-reflective coatings using standard etches because of their poor selectivity to photoresist and the resulting propensity to cause integrated circuit defects arising from anti-reflective coating remnants.
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