Invention Grant
US07265431B2 Imageable bottom anti-reflective coating for high resolution lithography
有权
可成像底部抗反射涂层,用于高分辨率光刻
- Patent Title: Imageable bottom anti-reflective coating for high resolution lithography
- Patent Title (中): 可成像底部抗反射涂层,用于高分辨率光刻
-
Application No.: US10150197Application Date: 2002-05-17
-
Publication No.: US07265431B2Publication Date: 2007-09-04
- Inventor: Swaminathan Sivakumar
- Applicant: Swaminathan Sivakumar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/06

Abstract:
A semiconductor wafer may be coated with an imageable anti-reflective coating. As a result, the coating may be removed using the same techniques used to remove overlying photoresists. This may overcome the difficulty of etching anti-reflective coatings using standard etches because of their poor selectivity to photoresist and the resulting propensity to cause integrated circuit defects arising from anti-reflective coating remnants.
Public/Granted literature
- US20030213968A1 Imageable bottom anti-reflective coating for high resolution ligthography Public/Granted day:2003-11-20
Information query
IPC分类: