Invention Grant
- Patent Title: Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same
- Patent Title (中): 铁电/顺电多层薄膜，其形成方法和使用其的高频可变装置
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Application No.: US11180744Application Date: 2005-07-12
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Publication No.: US07274058B2Publication Date: 2007-09-25
- Inventor: Su Jae Lee , Seung Eon Moon , Han Cheol Ryu , Min Hwan Kwak , Kwang Yong Kang
- Applicant: Su Jae Lee , Seung Eon Moon , Han Cheol Ryu , Min Hwan Kwak , Kwang Yong Kang
- Applicant Address: KR
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR
- Agency: Blakely Sokoloff Taylor & Zafman
- Priority: KR10-2004-0101087 20041203
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/00
Abstract:
A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
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