Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor
    1.
    发明授权
    Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor 有权
    使用突发MIT设备的可编程MIT传感器,以及包括MIT传感器的报警装置和二次电池防爆电路

    公开(公告)号:US08305221B2

    公开(公告)日:2012-11-06

    申请号:US12303000

    申请日:2007-05-30

    IPC分类号: G08B17/00

    CPC分类号: H01L49/003 G01K3/005

    摘要: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

    摘要翻译: 提供了具有可变MIT温度或电压的突发MIT装置,使用突发MIT装置的MIT传感器以及包括MIT传感器的报警装置和二次电池防爆电路。 MIT装置包括在转变温度或转变电压下经历突变MIT的突变MIT层和与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压,温度,电磁波,压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器,红外传感器,图像传感器,压力传感器,气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池,MIT传感器附接到二次电池以感测二次电池的温度,从而防止二次电池的可能的爆炸,以及由二次电池供电的保护电路体 。

    ACTIVE-MATRIX FIELD EMISSION PIXEL
    3.
    发明申请
    ACTIVE-MATRIX FIELD EMISSION PIXEL 有权
    有源矩阵场发射像素

    公开(公告)号:US20120097958A1

    公开(公告)日:2012-04-26

    申请号:US13244078

    申请日:2011-09-23

    摘要: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

    摘要翻译: 场发射像素包括其上形成有发射电子的场致发射体的阴极,形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管(TFT) 扫描信号,接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石,类金刚石碳,碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器,并且TFT可以包括多个晶体管,其具有施加相同信号的栅极,施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅,微晶硅,多晶硅,宽带隙材料如ZnO的半导体膜或有机半导体制成。

    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR
    8.
    发明申请
    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR 有权
    使用破碎麻醉器装置的可编程麻省传感器,以及包括麻省传感器的报警装置和二次电池防爆电路

    公开(公告)号:US20090315724A1

    公开(公告)日:2009-12-24

    申请号:US12303000

    申请日:2007-05-30

    CPC分类号: H01L49/003 G01K3/005

    摘要: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

    摘要翻译: 提供了具有可变MIT温度或电压的突变MIT装置,使用突发MIT装置的MIT传感器,以及包括MIT传感器的报警装置和二次电池防爆电路.MIT装置包括经历突发MIT的突发MIT层 在转变温度或过渡电压下,以及与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压,温度,电磁波,压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器,红外传感器,图像传感器,压力传感器,气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池,MIT传感器附接到二次电池以感测二次电池的温度,从而防止二次电池的可能的爆炸,以及由二次电池供电的保护电路体 。

    DEVICES USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE
    9.
    发明申请
    DEVICES USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE 失效
    使用破坏金属绝缘体过渡层的器件和制造器件的方法

    公开(公告)号:US20090230428A1

    公开(公告)日:2009-09-17

    申请号:US11721069

    申请日:2005-12-05

    IPC分类号: H01L29/78 H01L21/336

    CPC分类号: H01L49/003 H01L29/452

    摘要: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

    摘要翻译: 突变金属 - 绝缘体转换装置包括:突然的金属绝缘体过渡材料层,其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里,两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成,第二层形成在第一层上并包括In的第三层,第三层 形成在第二层上并且包含Mo或W,以及形成在第三层上并包含Au的第四层。

    Ultra-small optical/magnetic head actuator with pivot hinge and Halbach magnet array
    10.
    发明授权
    Ultra-small optical/magnetic head actuator with pivot hinge and Halbach magnet array 失效
    带旋转铰链和Halbach磁铁阵列的超小光学/磁头执行器

    公开(公告)号:US07540004B2

    公开(公告)日:2009-05-26

    申请号:US11270161

    申请日:2005-11-09

    IPC分类号: G11B21/02 G11B7/09

    摘要: An ultra-small optical/magnetic head actuator includes: a swing arm movable in a horizontal direction (tracking direction) and a vertical direction (focusing direction) and having mounted thereon a head for reading and writing information on a disk. A tracking actuator moves the swing arm in the horizontal direction (tracking direction) and a pivot hinge adjusts a radius of rotation of the swing arm and guides the movement of the swing arm in the tracking direction. A focusing actuator moves the swing arm in the vertical direction (focusing direction), wherein the focusing actuator includes a focusing coil attached under the swing arm and a Halbach magnet array disposed under the focusing coil minimizes thickness. Friction or backlash can be avoided, and non-repetitive errors can be reduced. The thickness of the ultra-small storage device can be reduced due to the use of a Halbach magnet array.

    摘要翻译: 超小光学/磁头致动器包括:可沿水平方向(跟踪方向)和垂直方向(聚焦方向)移动的摆臂,并且其上安装有用于在盘上读取和写入信息的头部。 跟踪致动器沿水平方向(跟踪方向)移动摆臂,枢轴铰链调节摆臂的旋转半径并引导摆臂在跟踪方向上的移动。 聚焦致动器沿垂直方向(聚焦方向)移动摆臂,其中聚焦致动器包括安装在摆臂下方的聚焦线圈,并且设置在聚焦线圈下方的Halbach磁体阵列使厚度最小化。 可以避免摩擦或间隙,可以减少不重复的误差。 由于使用了Halbach磁体阵列,可以减小超小型存储装置的厚度。