- 专利标题: Device and method for isolating a short-circuited integrated circuit (IC) from other ICs on a semiconductor wafer
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申请号: US11607367申请日: 2006-12-01
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公开(公告)号: US07276927B2公开(公告)日: 2007-10-02
- 发明人: Warren M. Farnworth , William K. Waller , Leland R. Nevill , Raymond J. Beffa , Eugene H. Cloud
- 申请人: Warren M. Farnworth , William K. Waller , Leland R. Nevill , Raymond J. Beffa , Eugene H. Cloud
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A circuit for isolating a short-circuited integrated circuit (IC) formed on the surface of a semiconductor wafer from other ICs formed on the wafer that are interconnected with the short-circuited IC includes control circuitry within the short-circuited IC for sensing the short circuit. The control circuitry may sense the short circuit in a variety of ways, including sensing excessive current drawn by the short-circuited IC, and sensing an abnormally low or high voltage within the short-circuited IC. Switching circuitry also within the short-circuited IC selectively isolates the short-circuited IC from the other ICs on the wafer in response to the control circuitry sensing the short circuit. As a result, if the wafer is under probe test, for example, testing can continue uninterrupted on the other ICs while the short-circuited IC is isolated.
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