发明授权
- 专利标题： Memory cell structure
- 专利标题（中）： 存储单元结构
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申请号： US11093652申请日： 2005-03-30
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公开(公告)号： US07312506B2公开(公告)日： 2007-12-25
- 发明人: Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
- 申请人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
公开/授权文献
- US20060233002A1 Memory cell structure 公开/授权日：2006-10-19
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