发明授权
- 专利标题: System and method for processing masks with oblique features
- 专利标题(中): 用倾斜特征处理掩模的系统和方法
-
申请号: US10765531申请日: 2004-01-27
-
公开(公告)号: US07314689B2公开(公告)日: 2008-01-01
- 发明人: Burn Jeng Lin , Ping Yang , Hong Chang Hsieh , Yao Ching Ku , Chin Hsian Lin , Chiu Shan Yoo
- 申请人: Burn Jeng Lin , Ping Yang , Hong Chang Hsieh , Yao Ching Ku , Chin Hsian Lin , Chiu Shan Yoo
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G03C5/00
摘要:
A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.
公开/授权文献
信息查询