公开(公告)号：US07314689B2

公开(公告)日：2008-01-01

申请号：US10765531

申请日：2004-01-27

Applicant: Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

Inventor： Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

IPC: G03F1/00 ,  G03C5/00

CPC classification number: G03F7/70425 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70383 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7046 ,  G03F9/7049

Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。

公开(公告)号：US07251015B2

公开(公告)日：2007-07-31

申请号：US11167776

申请日：2005-06-27

Applicant: Chiu-Shan Yoo

Inventor： Chiu-Shan Yoo

IPC: G03B27/68 ,  G03B27/42

CPC classification number: G03F7/7085 ,  G03F7/70441 ,  G03F7/70625

Abstract: A photolithography mask critical dimension metrology system is provided. The system includes a radiation source, a holder operable to securely hold at least one mask oriented to receive radiation emitted from the radiation source, a projection system operable to direct radiation passing through the at least one mask, and an image capture system operable to receive radiation directed by the projection system and capture a projected image of the at least one mask.

Abstract translation: 提供光刻掩模临界尺寸计量系统。 该系统包括辐射源，保持器，其可操作以牢固地保持定向成接收从辐射源发射的辐射的至少一个掩模，可操作以引导通过至少一个掩模的辐射的投影系统，以及可操作以接收 由投影系统引导的辐射并捕获至少一个掩模的投影图像。

公开(公告)号：US20060290907A1

公开(公告)日：2006-12-28

申请号：US11167776

申请日：2005-06-27

Applicant: Chiu-Shan Yoo

Inventor： Chiu-Shan Yoo

IPC: G03B27/68

CPC classification number: G03F7/7085 ,  G03F7/70441 ,  G03F7/70625

Abstract: A system comprising a radiation source, a holder operable to securely hold at least one mask oriented to receive radiation emitted from the radiation source, a projection system operable to direct radiation passing through the at least one mask, and an image capture system operable to receive radiation directed by the projection system and capture a projected image of the at least one mask.

Abstract translation: 一种包括辐射源的系统，可操作以可靠地保持定向以接收从所述辐射源发射的辐射的至少一个掩模的保持器，可操作以引导通过所述至少一个掩模的辐射的投影系统，以及可操作以接收 由投影系统引导的辐射并捕获至少一个掩模的投影图像。