发明授权
US07314795B2 Methods of forming electronic devices including electrodes with insulating spacers thereon
失效
形成电子器件的方法，包括其上具有绝缘间隔物的电极
- 专利标题： Methods of forming electronic devices including electrodes with insulating spacers thereon
- 专利标题（中）： 形成电子器件的方法，包括其上具有绝缘间隔物的电极
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申请号： US11397541申请日： 2006-04-04
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公开(公告)号： US07314795B2公开(公告)日： 2008-01-01
- 发明人: In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
- 申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR03-81099 20031117
- 主分类号： H01L21/8243
- IPC分类号： H01L21/8243 ; H01L21/8244 ; H01L21/8242 ; H01L21/20
摘要：
An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.
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