发明授权
- 专利标题: High-speed electron beam inspection
- 专利标题(中): 高速电子束检查
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申请号: US11031091申请日: 2005-01-06
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公开(公告)号: US07315022B1公开(公告)日: 2008-01-01
- 发明人: David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
- 申请人: David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
- 申请人地址: US CA Milpitas
- 专利权人: KLA-Tencor Technologies Corporation
- 当前专利权人: KLA-Tencor Technologies Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Okamoto & Benedicto LLP
- 主分类号: H01J37/20
- IPC分类号: H01J37/20 ; G01R31/28
摘要:
One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.
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