发明授权
- 专利标题： Non volatile data storage through dielectric breakdown
- 专利标题（中）： 非易失性数据存储通过介质击穿
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申请号： US10956285申请日： 2004-09-30
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公开(公告)号： US07321502B2公开(公告)日： 2008-01-22
- 发明人: Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
- 申请人： Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： G11C17/00
- IPC分类号： G11C17/00
摘要：
A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.
公开/授权文献
- US20060071646A1 Non volatile data storage through dielectric breakdown 公开/授权日：2006-04-06
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