发明授权
- 专利标题: Photomask blank, photomask, and method of manufacture
- 专利标题(中): 光掩模坯料,光掩模和制造方法
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申请号: US10811924申请日: 2004-03-30
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公开(公告)号: US07329474B2公开(公告)日: 2008-02-12
- 发明人: Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
- 申请人: Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
- 申请人地址: JP Tokyo
- 专利权人: Shin-Estu Chemical Co., Ltd.
- 当前专利权人: Shin-Estu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2003-093712 20030331; JP2003-093936 20030331; JP2003-094321 20030331
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; B32B17/06
摘要:
A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
公开/授权文献
- US20040197679A1 Photomask blank, photomask, and method of manufacture 公开/授权日:2004-10-07