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公开(公告)号：US07736824B2
公开(公告)日：2010-06-15
申请号：US11952283
申请日：2007-12-07
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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2.发明授权Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask 有权产生相移掩模空白的方法，产生相移掩模的方法，相移掩模空白和相移掩模公开(公告)号：US07344806B2
公开(公告)日：2008-03-18
申请号：US10806202
申请日：2004-03-23
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3464 , G03F1/54 , G03F1/68
摘要： There is disclosed a method of producing a phase shift mask blank wherein the method includes at least a step of forming one or more layers of phase shift films on a substrate by a sputtering method, and in the step, the phase shift films are formed by the sputtering method while simultaneously discharging plural targets having different compositions. Thereby, a phase shift mask blank having a desired composition and quality, in particular, having a phase shift film with few defects can be easily produced.
摘要翻译： 公开了一种制造相移掩模板的方法，其中该方法至少包括通过溅射法在衬底上形成一层或多层相移膜的步骤，并且在该步骤中，相移膜由 同时排出具有不同组成的多个靶的溅射方法。 由此，可以容易地制造具有期望的组成和质量的相移掩模坯料，特别是具有少量缺陷的相移膜。
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公开(公告)号：US07329474B2
公开(公告)日：2008-02-12
申请号：US10811924
申请日：2004-03-30
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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公开(公告)号：US20080090159A1
公开(公告)日：2008-04-17
申请号：US11952283
申请日：2007-12-07
IPC分类号： G03F1/00
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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公开(公告)号：US20070092807A1
公开(公告)日：2007-04-26
申请号：US11545451
申请日：2006-10-11
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译： 具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。 例如，不透明石英部分由“发泡石英”制成。 此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内 关于闪光照射等期间的照射光的能量的条件。 堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。
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公开(公告)号：US07632609B2
公开(公告)日：2009-12-15
申请号：US11545451
申请日：2006-10-11
IPC分类号： G03F1/14
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译： 具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。 例如，不透明石英部分由“发泡石英”制成。 此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内 关于闪光照射等期间的照射光的能量的条件。 堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。
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公开(公告)号：US07989124B2
公开(公告)日：2011-08-02
申请号：US12820908
申请日：2010-06-22
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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公开(公告)号：US07351505B2
公开(公告)日：2008-04-01
申请号：US10968886
申请日：2004-10-21
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Yuichi Fukushima , Yoshihiro Ii , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Yuichi Fukushima , Yoshihiro Ii , Tadashi Saga
IPC分类号： G03F1/00
摘要： In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.
摘要翻译： 在包括基板上的相移多层膜的相移掩模坯料中，相移多层膜由至少一层光吸收功能膜和至少一层相移功能膜构成，光吸收功能膜具有 消光系数k随着波长从157nm变化到260nm而增加，并且具有高达15nm的厚度。 相移掩模空白具有最小化透射率的波长依赖性并且可以用单个干蚀刻气体进行处理。
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公开(公告)号：US08003284B2
公开(公告)日：2011-08-23
申请号：US12820918
申请日：2010-06-22
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
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公开(公告)号：US20100261100A1
公开(公告)日：2010-10-14
申请号：US12820918
申请日：2010-06-22
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： G03F1/00
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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