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25 条记录 (耗时 0.017 秒)

    Resin compositions for peel-off coatings comprising a film-forming polymeric resin, an organo polysiloxane and a solvent
    3.
    发明授权
    Resin compositions for peel-off coatings comprising a film-forming polymeric resin, an organo polysiloxane and a solvent 失效
    用于剥离涂层的树脂组合物包含成膜聚合物树脂，有机聚硅氧烷和溶剂

    公开(公告)号：US4146511A

    公开(公告)日：1979-03-27

    申请号：US854336

    申请日：1977-11-23

    申请人： Iwao Moriya ,  Toru Sema ,  Sigeyosi Hatasa

    发明人： Iwao Moriya ,  Toru Sema ,  Sigeyosi Hatasa

    IPC分类号： C09D5/20 ,  C09D101/08 ,  C09D157/00 ,  C08L1/10 ,  C08L1/12 ,  C08L1/18 ,  C08L31/04

    CPC分类号： C09D101/08 ,  C09D157/00 ,  C09D5/20

    摘要： The resin compositions for peel-off coatings comprise a certain film-forming polymeric resin, an organopolysiloxane having a polyoxyalkylene group as the side chain, and a solvent. The coating compositions applied to the surfaces of various shaped articles provide protective films thereon, and the films thus formed are tough and can exhibit an excellent peelability even after the lapse of a long period of time or after heating. The coating resin compositions are prepared by a method comprising heating the mixture of the above-named individual components at an elevated temperature, not at room temperature.

    摘要翻译： 用于剥离涂料的树脂组合物包含某种成膜聚合树脂，具有聚氧化烯基作为侧链的有机聚硅氧烷和溶剂。 施加到各种成形制品的表面上的涂料组合物在其上提供保护膜，由此形成的膜是韧性的，并且即使经过长时间或加热后也能显示优异的剥离性。 涂料树脂组合物通过包括在升高的温度而不是在室温下加热上述各个组分的混合物的方法来制备。

    Heat-curable resin composition
    4.
    发明授权
    Heat-curable resin composition 有权

    公开(公告)号：US10829589B2

    公开(公告)日：2020-11-10

    申请号：US16378618

    申请日：2019-04-09

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Naoyuki Kushihara ,  Kazuaki Sumita

    IPC分类号： C08G73/00 ,  C08K3/013 ,  C08L1/12 ,  C08K3/22 ,  C08G61/02 ,  C08L61/12

    摘要： Provided is a heat-curable resin composition having an excellent workability, and capable of yielding a cured product having both a heat resistance and a low water-absorption property. The heat-curable resin composition contains: (A) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 50 to 140; (B) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 150 to 500; and (C) a curing accelerator, in which the cyanate ester compound (A) is in an amount of 20 to 85% by mass per a total of 100% by mass of the components (A) and (B), and the cyanate ester compound (B) is in an amount of 15 to 80% by mass per the total of 100% by mass of the components (A) and (B).

    Method of producing high molecular weight organopolysiloxane, composition comprising the high molecular weight organopolysiloxane, and optical semiconductor device sealed with cured product thereof
    5.
    发明授权
    Method of producing high molecular weight organopolysiloxane, composition comprising the high molecular weight organopolysiloxane, and optical semiconductor device sealed with cured product thereof 有权
    生产高分子量有机聚硅氧烷的方法，包含高分子量有机聚硅氧烷的组合物和用其固化产物密封的光学半导体器件

    公开(公告)号：US07563854B2

    公开(公告)日：2009-07-21

    申请号：US11586525

    申请日：2006-10-26

    申请人： Hisashi Shimizu ,  Toshio Shiobara ,  Tsutomu Kashiwagi

    发明人： Hisashi Shimizu ,  Toshio Shiobara ,  Tsutomu Kashiwagi

    IPC分类号： C08G77/06

    CPC分类号： C08G77/04 ,  C08G77/06 ,  C08G77/08 ,  C08G77/14 ,  Y10T428/31663

    摘要： Provided is a method of producing a high molecular weight organopolysiloxane with a polystyrene equivalent weight average molecular weight of at least 5×104, comprising the steps of producing an organopolysiloxane by subjecting a silane compound having a hydrolyzable group to a first hydrolysis and condensation, and then subjecting that organopolysiloxane to an additional second hydrolysis and condensation. The high molecular weight organopolysiloxane is stable, resistant to gelling, and resistant to cracking even when formed as a thick film. A resin composition comprising the high molecular weight organopolysiloxane and a condensation catalyst is useful for sealing an optical element and for producing an optical semiconductor device.

    摘要翻译： 本发明提供一种聚苯乙烯换算重均分子量为5×10 4以上的高分子量有机聚硅氧烷的制造方法，其特征在于，包括使具有水解性基团的硅烷化合物进行第一次水解缩合而制造有机聚硅氧烷的工序， 该有机聚硅氧烷再次进行水解和缩合。 高分子量有机聚硅氧烷是稳定的，耐胶凝的，即使形成厚膜也能耐裂纹。 包含高分子量有机聚硅氧烷和缩合催化剂的树脂组合物可用于密封光学元件并用于制造光学半导体器件。

    Pattern formation method
    8.
    发明授权
    Pattern formation method 失效
    图案形成方法

    公开(公告)号：US6074804A

    公开(公告)日：2000-06-13

    申请号：US102024

    申请日：1998-06-22

    申请人： Masayuki Endo ,  Toshinobu Ishihara ,  Toru Kubota ,  Katsuya Takemura

    发明人： Masayuki Endo ,  Toshinobu Ishihara ,  Toru Kubota ,  Katsuya Takemura

    IPC分类号： G03F7/004 ,  G03F7/26 ,  G03F7/00

    CPC分类号： G03F7/265 ,  G03F7/0045

    摘要： After forming a resist film by coating a semiconductor substrate with a resist, pattern exposure is conducted by irradiating the resist film with ArF excimer laser with a mask used. A silylation agent of 4-dimethylsiloxy-3-penten-2-one is supplied onto the surface of the resist film having been subjected to the pattern exposure, thereby forming a silylated layer in an unexposed portion of the resist film. The resist film is etched by using the silylated layer as a mask, so as to remove an exposed portion of the resist film. Thus, a resist pattern can be formed out of the resist film.

    摘要翻译： 在通过用抗蚀剂涂覆半导体衬底形成抗蚀剂膜之后，通过用所用掩模的ArF准分子激光器照射抗蚀剂膜来进行图案曝光。 将4-二甲基甲硅烷氧基-3-戊烯-2-酮的甲硅烷基化剂供给到已经进行图案曝光的抗蚀剂膜的表面上，从而在抗蚀剂膜的未曝光部分中形成甲硅烷基化层。 通过使用甲硅烷基化层作为掩模蚀刻抗蚀剂膜，以除去抗蚀剂膜的暴露部分。 因此，可以从抗蚀剂膜形成抗蚀剂图案。

    Pattern forming process
    9.
    发明授权
    Pattern forming process 有权
    图案形成过程

    公开(公告)号：US09122147B2

    公开(公告)日：2015-09-01

    申请号：US14156538

    申请日：2014-01-16

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Jun Hatakeyama ,  Tsutomu Ogihara

    IPC分类号： G03F7/26 ,  G03F7/00 ,  G03F7/32 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/00 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0273

    摘要： A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution of a resin having a carbon content of at least 75 wt % in the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

    摘要翻译： 通过将包含具有酸不稳定基团的重复单元，光致酸发生剂和第一有机溶剂的树脂的抗蚀剂组合物涂覆在可加工的基材上，预烘烤，曝光，PEB和在有机溶剂显影剂中显影形成图案，以形成 一种负面的模式; 加热负型图案使其耐受第二有机溶剂; 在其中的第二有机溶剂中涂覆碳含量至少为75重量％的树脂溶液，预烘烤和干蚀刻以实现图像反转以将负图案转换成正图案。

    DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS
    10.
    发明申请
    DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS 有权
    金刚石生产方法和直流等离子体增强CVD装置

    公开(公告)号：US20140041574A1

    公开(公告)日：2014-02-13

    申请号：US13954669

    申请日：2013-07-30

    申请人： Shin-Estu Chemical Co., Ltd.

    发明人： Hitoshi NOGUCHI

    IPC分类号： C30B25/16

    CPC分类号： C30B25/16 ,  C23C16/27 ,  C23C16/272 ,  C23C16/515 ,  C23C16/517 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/183 ,  C30B29/04 ,  H01J37/32027 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/3321

    摘要： Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

    摘要翻译： 通过在用于保持基板（S）的载台电极（12）和用于保持基板（S）的直流电压之间施加DC电压的DC等离子体增强CVD工艺，在含碳气体和氢气的混合物的基板（S）上生长金刚石 施加电压（13）。 在通过施加直流电压生长金刚石的步骤中，在预定的时刻在级电极和施加电极之间施加与用于金刚石生长的直流电压相反极性的单个脉冲电压。 质量钻石以稳定的增长率生产。