发明授权
- 专利标题: Interconnect structure and method of fabrication of same
- 专利标题(中): 互连结构及其制造方法
-
申请号: US11107074申请日: 2005-04-15
-
公开(公告)号: US07335588B2公开(公告)日: 2008-02-26
- 发明人: Chih-Chao Yang , Lawrence A. Clevenger , Andrew P. Cowley , Timothy J. Dalton , Meeyoung H. Yoon
- 申请人: Chih-Chao Yang , Lawrence A. Clevenger , Andrew P. Cowley , Timothy J. Dalton , Meeyoung H. Yoon
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Robert M. Trepp
- 主分类号: H01L24/4763
- IPC分类号: H01L24/4763
摘要:
A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
公开/授权文献
- US20060234497A1 Interconnect structure and method of fabrication of same 公开/授权日:2006-10-19
信息查询