Invention Grant
- Patent Title: Sample support prepared by semiconductor silicon process technique
- Patent Title (中): 采用半导体硅工艺制备样品
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Application No.: US11356698Application Date: 2006-02-17
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Publication No.: US07345289B2Publication Date: 2008-03-18
- Inventor: Kouji Iwasaki , Masanso Munekane
- Applicant: Kouji Iwasaki , Masanso Munekane
- Applicant Address: JP
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2005-044604 20050221
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01J37/305 ; G01N1/28
Abstract:
A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.
Public/Granted literature
- US20060189021A1 Sample support prepared by semiconductor silicon process technique Public/Granted day:2006-08-24
Information query
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