摘要:
An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要:
An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.
摘要:
Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.
摘要:
To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要:
A probe mechanism and a sample pick up mechanism of the invention are provided at an observing apparatus or an analyzing apparatus and characterized in including a tip member comprising a needle-like member brought into contact with a sample, including a driving electrostatic actuator and means for monitoring a change in an electrostatic capacitance between electrodes of the electrostatic actuator, and capable of sensing that the probe is brought into contact with a sample by the monitor.
摘要:
A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.
摘要:
An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.
摘要:
A method for preparing a sample for observation, by the steps of: contacting a first predetermined area of the sample surface with an organic compound vapor while irradiating the first predetermined area with an ion beam to decompose the organic compound into a layer having a mask function, the layer covering the first predetermined area; and contacting a second predetermined area of the sample surface with an etching gas while irradiating the second predetermined area with an ion beam in order to remove material from the sample surface at the second predetermined area, wherein the second predetermined area includes at least part of the first predetermined area and the layer covering the first predetermined area prevents removal of material from the sample surface in the first predetermined area.
摘要:
A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.
摘要:
Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.