An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a third N+ doped region. In addition, the holding current of the ESD device can be set to a specific value by modulating the first distance and the second distance. The holding current is in inverse proportion to the first distance and the second distance.