Invention Grant
US07364644B2 Silver selenide film stoichiometry and morphology control in sputter deposition
失效
硒化银膜在溅射沉积中的化学计量和形态控制
- Patent Title: Silver selenide film stoichiometry and morphology control in sputter deposition
- Patent Title (中): 硒化银膜在溅射沉积中的化学计量和形态控制
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Application No.: US10230279Application Date: 2002-08-29
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Publication No.: US07364644B2Publication Date: 2008-04-29
- Inventor: Jiutao Li , Keith Hampton , Allen McTeer
- Applicant: Jiutao Li , Keith Hampton , Allen McTeer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
Public/Granted literature
- US20040040835A1 Silver selenide film stoichiometry and morphology control in sputter deposition Public/Granted day:2004-03-04
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