发明授权
US07367865B2 Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers
失效
制造具有低缺陷表面的晶片的方法，由此获得的晶片和由晶片制成的电子部件
- 专利标题： Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers
- 专利标题（中）： 制造具有低缺陷表面的晶片的方法，由此获得的晶片和由晶片制成的电子部件
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申请号： US11069118申请日： 2005-03-01
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公开(公告)号： US07367865B2公开(公告)日： 2008-05-06
- 发明人: Peter Blaum , Burkhard Speit , Ingo Koehler , Bernd Ruediger , Wolfram Beier
- 申请人： Peter Blaum , Burkhard Speit , Ingo Koehler , Bernd Ruediger , Wolfram Beier
- 申请人地址： DE Mainz
- 专利权人： Schott AG
- 当前专利权人： Schott AG
- 当前专利权人地址： DE Mainz
- 代理商 Michael J. Striker
- 优先权： DE102004010379 20040303
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2 and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.
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