摘要:
The method of making an especially low-stress wafer substrate with an active surface to be coated with few surface defects that produce coating defects includes polishing the active surface with the help of a polishing tool in order to smooth it and changing a polishing direction of the polishing tool performing the polishing over the active surface so that each site or location on the surface is polished with polishing motions distributed statistically and uniformly over a 360° angle.
摘要:
The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2 and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.
摘要翻译:电子半导体部件具有具有有源面的晶片基板和涂覆有源面的半导体层。 为了使半导体层具有几个表面缺陷,晶片衬底是蓝宝石或碳化硅单晶,并且活性表面的凹坑密度小于500凹坑/ cm 2,优选小于100 凹坑/ cm 2。 用于获得具有这些凹坑密度的活性表面的抛光方法包括用抛光剂如硅悬浮液和抛光工具进行抛光,抛光工具以优选0.05-0.2kg / cm 2的压力压在活性表面上, SUP> 2并且在抛光期间在360°角度上统计均匀地分布抛光运动而在有源表面上移动。
摘要:
A method for making a substrate wafer for a low-defect semiconductor component is described. In this method a single crystal having a [0001] surface perpendicular to a c-axis thereof is formed, subdivided into thin disks each with at least one disk surface to be coated, the at least one disk surface is smoothed and the thin disks are tempered at a temperature above 1770 K. Preferably the tempering occurs for at least 10 minutes at temperatures greater than 1770 K in a dust-poor atmosphere with a reduced oxygen partial pressure. Al2O3 is a preferred material for the single crystal.
摘要翻译:描述了制造用于低缺陷半导体部件的衬底晶片的方法。 在该方法中,形成具有垂直于其c轴的[0001]表面的单晶,细分成具有至少一个待涂覆的盘表面的薄盘,至少一个盘表面被平滑,并且薄盘是 在高于1770K的温度下回火。优选地,在具有降低的氧分压的无尘气氛中,大于1770K的温度下回火至少10分钟。 Al 2 O 3是用于单晶的优选材料。
摘要:
A method for determining the temperature or the ohmic resistance of an electrical component, especially of a coil of a magnetic valve. The component temperature is estimated with the aid of a temperature model, which is able to determine the curve of the component temperature even during a control of the valve. The temperature model is corrected regularly based on the measured value, in this context.
摘要:
The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.
摘要:
The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices.
摘要:
The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.
摘要:
The present invention relates to aluminium oxide pastes and to a process for the use of the aluminium oxide pastes for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers.
摘要翻译:本发明涉及氧化铝浆料以及使用氧化铝浆料形成Al 2 O 3涂层或混合的Al 2 O 3混合层的方法。
摘要:
The present invention relates to a method for the wet-chemical edge deletion of solar cells. An etching paste is applied to the edge of a solar cell substrate surface and after the reaction is complete, the paste residue is removed. Optionally, the substrate surface is cleaned and dried. The etching paste comprises 85% H3PO4, NH4HF2 and 65% HNO3 in a ratio in the range from 7:1:1.5 to 10:1:3.5, based on the weight.
摘要:
The present invention relates to aluminium oxide pastes and to a process for the use of the aluminium oxide pastes for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers.
摘要翻译:本发明涉及氧化铝浆料以及使用氧化铝浆料形成Al 2 O 3涂层或混合的Al 2 O 3混合层的方法。