发明授权
US07368737B2 Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
失效
电子束写入方法,电子束写入装置和半导体器件的制造方法
- 专利标题: Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
- 专利标题(中): 电子束写入方法,电子束写入装置和半导体器件的制造方法
-
申请号: US11409987申请日: 2006-04-25
-
公开(公告)号: US07368737B2公开(公告)日: 2008-05-06
- 发明人: Ryoichi Inanami , Tetsuro Nakasugi
- 申请人: Ryoichi Inanami , Tetsuro Nakasugi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2005-128231 20050426
- 主分类号: H01J37/08
- IPC分类号: H01J37/08
摘要:
An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.
公开/授权文献
信息查询