Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    2.
    发明授权
    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method 失效
    电子束写入方法,电子束写入装置和半导体器件的制造方法

    公开(公告)号:US07368737B2

    公开(公告)日:2008-05-06

    申请号:US11409987

    申请日:2006-04-25

    IPC分类号: H01J37/08

    摘要: An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

    摘要翻译: 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。

    TEMPLATE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING PATTERN
    4.
    发明申请
    TEMPLATE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING PATTERN 审中-公开
    模板,其制造方法和形成图案的方法

    公开(公告)号:US20100264113A1

    公开(公告)日:2010-10-21

    申请号:US12724819

    申请日:2010-03-16

    IPC分类号: B44C1/22 B29C35/08 B29C59/02

    摘要: There is provided a template in which a gap region of a substrate to be processed can be covered with an imprint resist, a method of manufacturing the same, and a method of forming a pattern.A template used in an optical imprint method includes a substrate, a pattern forming region that is provided on the substrate and includes an imprint pattern, a first step portion that is provided outside the pattern forming region and is disposed below the pattern forming region, a first side portion that connects the pattern forming region and the first step portion, a second step portion that is provided outside the first step portion and is disposed below the first step portion, and a second side portion that connects the first step portion and the second step portion and has a surface roughness more than that of the first side portion.

    摘要翻译: 提供了一种模板,其中待加工的基板的间隙区域可以用抗蚀刻剂覆盖,其制造方法和形成图案的方法。 在光学印记法中使用的模板包括基板,设置在基板上的图案形成区域,并且包括印模图案,设置在图案形成区域的外侧并设置在图案形成区域下方的第一台阶部, 连接图案形成区域和第一台阶部的第一侧面部分,设置在第一台阶部分的外侧并设置在第一台阶部下方的第二台阶部,以及将第一台阶部和第二台阶部 并且具有比第一侧部的表面粗糙度更多的表面粗糙度。

    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    5.
    发明申请
    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method 失效
    电子束写入方法,电子束写入装置和半导体器件的制造方法

    公开(公告)号:US20060289797A1

    公开(公告)日:2006-12-28

    申请号:US11409987

    申请日:2006-04-25

    IPC分类号: A61N5/00

    摘要: An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

    摘要翻译: 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。

    Template inspection method and manufacturing method for semiconductor device
    6.
    发明授权
    Template inspection method and manufacturing method for semiconductor device 有权
    半导体器件的模板检查方法和制造方法

    公开(公告)号:US08227267B2

    公开(公告)日:2012-07-24

    申请号:US12553906

    申请日:2009-09-03

    IPC分类号: H01L21/66

    摘要: A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.

    摘要翻译: 一种用于对模板进行缺陷检查的模板检查方法,通过将用于形成图案的模板的图案形成表面靠近涂覆在平坦基板上的第一流体,将第一流体填充到模板的图案中,以及通过 在第一流体夹在模板和基板之间的状态下进行模板的光学观察,其中第一流体的光学常数与模板的光学常数之间的差异大于模板的光学常数之间的差异 空气和模板的光学常数。

    Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device
    7.
    发明授权
    Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device 失效
    字符投影系统的带电粒子束曝光方法,字符投影系统的带电粒子束曝光装置,带电粒子束曝光装置中的使用程序和半导体装置的制造方法

    公开(公告)号:US07459705B2

    公开(公告)日:2008-12-02

    申请号:US11583114

    申请日:2006-10-19

    IPC分类号: G03F9/00 G21K5/10 H01J37/20

    摘要: A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

    摘要翻译: 公开了一种带电粒子束曝光方法,其包括制备具有字符孔的孔径掩模,考虑至少一个因素,校正设计数据中设计图案的尺寸,例如带电粒子的前向散射距离,向后散射距离 带电粒子的模糊,带电粒子束的模糊,由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差,以及 类似地,将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据,并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。

    Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device
    8.
    发明申请
    Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device 失效
    字符投影系统的带电粒子束曝光方法,字符投影系统的带电粒子束曝光装置,带电粒子束曝光装置中的使用程序和半导体装置的制造方法

    公开(公告)号:US20070114463A1

    公开(公告)日:2007-05-24

    申请号:US11583114

    申请日:2006-10-19

    IPC分类号: G21K5/10

    摘要: A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

    摘要翻译: 公开了一种带电粒子束曝光方法,其包括制备具有字符孔的孔径掩模,考虑至少一个因素,校正设计数据中设计图案的尺寸,例如带电粒子的前向散射距离,向后散射距离 带电粒子的模糊,带电粒子束的模糊,由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差,以及 类似地,将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据,并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。

    TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
    9.
    发明申请
    TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 有权
    用于半导体器件的模板检测方法和制造方法

    公开(公告)号:US20100075443A1

    公开(公告)日:2010-03-25

    申请号:US12553906

    申请日:2009-09-03

    IPC分类号: H01L21/66 G06K9/00

    摘要: A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.

    摘要翻译: 一种用于对模板进行缺陷检查的模板检查方法,通过将用于形成图案的模板的图案形成表面靠近涂覆在平坦基板上的第一流体,将第一流体填充到模板的图案中,以及通过 在第一流体夹在模板和基板之间的状态下进行模板的光学观察,其中第一流体的光学常数与模板的光学常数之间的差异大于模板的光学常数之间的差异 空气和模板的光学常数。

    Transferring pattern onto semiconductor substrate using optimum transfer condition determined for each divided area
    10.
    发明授权
    Transferring pattern onto semiconductor substrate using optimum transfer condition determined for each divided area 有权
    使用为每个分割区域确定的最佳转印条件将图案转印到半导体衬底上

    公开(公告)号:US08392855B2

    公开(公告)日:2013-03-05

    申请号:US13040294

    申请日:2011-03-04

    IPC分类号: G06F17/50

    摘要: According to one embodiment, a pattern forming method comprises transferring a pattern formed in a surface of a template to a plurality of chip areas in a semiconductor substrate under different transfer conditions. Furthermore, the transferring the pattern formed in the surface of the template to the plurality of chip areas in the semiconductor substrate under the different transfer conditions comprises transferring the pattern formed in the surface of the template to the semiconductor substrate at least twice under each identical transfer condition. Moreover, the pattern forming method comprises dividing each of the plurality of chip areas into a plurality of areas, determining an optimum condition for each set of corresponding divided areas in the plurality of chip areas, and transferring the pattern onto the semiconductor substrate using the optimum transfer condition determined for each divided area.

    摘要翻译: 根据一个实施例,图案形成方法包括在不同的转移条件下将形成在模板的表面中的图案转移到半导体衬底中的多个芯片区域。 此外,在不同的转移条件下将形成在模板表面上的图案转移到半导体衬底中的多个芯片区域包括在每个相同转移下将形成在模板表面中的图案转移到半导体衬底至少两次 条件。 此外,图案形成方法包括将多个芯片区域中的每一个划分成多个区域,为多个芯片区域中的每组对应的分割区域确定最佳条件,并使用最优的方法将图案转移到半导体衬底上 为每个划分区域确定转移条件。