发明授权
US07371880B2 Copper (I) compounds useful as deposition precursors of copper thin films
有权
可用作铜薄膜沉积前体的铜(I)化合物
- 专利标题: Copper (I) compounds useful as deposition precursors of copper thin films
- 专利标题(中): 可用作铜薄膜沉积前体的铜(I)化合物
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申请号: US11626363申请日: 2007-01-23
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公开(公告)号: US07371880B2公开(公告)日: 2008-05-13
- 发明人: Chongying Xu , Alexander Borovik , Thomas H. Baum
- 申请人: Chongying Xu , Alexander Borovik , Thomas H. Baum
- 申请人地址: US CT Danbury
- 专利权人: Advanced Technology Materials, Inc.
- 当前专利权人: Advanced Technology Materials, Inc.
- 当前专利权人地址: US CT Danbury
- 代理机构: Intellectual Property / Technology Law
- 代理商 Steven J. Hultquist; Maggie Chappuis
- 主分类号: C07F1/08
- IPC分类号: C07F1/08 ; C23C16/00
摘要:
Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.