- 专利标题： Methods of forming capacitors
-
申请号： US10695959申请日： 2003-10-27
-
公开(公告)号： US07374993B2公开(公告)日： 2008-05-20
- 发明人: Matthew W. Miller , Cem Basceri
- 申请人： Matthew W. Miller , Cem Basceri
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.
公开/授权文献
- US20050090069A1 Methods of forming capacitors 公开/授权日：2005-04-28
信息查询
IPC分类:
