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8 条记录 (耗时 0.022 秒)

    Methods of forming capacitors
    1.
    发明授权
    Methods of forming capacitors 有权

    公开(公告)号：US07648873B2

    公开(公告)日：2010-01-19

    申请号：US11954902

    申请日：2007-12-12

    申请人： Matthew W. Miller ,  Cem Basceri

    发明人： Matthew W. Miller ,  Cem Basceri

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

    摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

    Methods of forming capacitors
    2.
    发明授权
    Methods of forming capacitors 有权

    公开(公告)号：US07374993B2

    公开(公告)日：2008-05-20

    申请号：US10695959

    申请日：2003-10-27

    申请人： Matthew W. Miller ,  Cem Basceri

    发明人： Matthew W. Miller ,  Cem Basceri

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

    摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

    Methods of forming capacitors
    3.
    发明授权
    Methods of forming capacitors 失效
    形成电容器的方法

    公开(公告)号：US07741175B2

    公开(公告)日：2010-06-22

    申请号：US11954913

    申请日：2007-12-12

    申请人： Matthew W. Miller ,  Cem Basceri

    发明人： Matthew W. Miller ,  Cem Basceri

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

    摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

    摘要翻译： 形成电容器的方法包括在半导体衬底上形成第一电容器电极。 电容器电介质区域形成在第一电容器电极上。 电容器介质区域具有暴露的氧化物容纳表面。 用至少一种硼烷或硅烷处理电容器电介质区域暴露的含氧化物表面。 第二电容器电极沉积在经处理的含氧化物表面上。 第二电容器电极具有与经处理的含氧化物表面接触的内金属表面。 考虑了其他方面和实现。

    Reactors, systems and methods for depositing thin films onto microfeature workpieces
    4.
    发明授权
    Reactors, systems and methods for depositing thin films onto microfeature workpieces 有权
    将薄膜沉积在微型工件上的反应器，系统和方法

    公开(公告)号：US07699932B2

    公开(公告)日：2010-04-20

    申请号：US10859883

    申请日：2004-06-02

    申请人： Matthew W. Miller ,  Cem Basceri

    发明人： Matthew W. Miller ,  Cem Basceri

    IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306

    CPC分类号： C23C16/45544 ,  C23C16/45519

    摘要： A reactor, system including reactors, and methods for depositing thin films on microfeature workpieces comprising a reaction vessel having a chamber, a gas distributor attached to the reaction vessel, a workpiece holder in the chamber, and a side unit in the reaction vessel at a location relative to the gas distributor and/or the workpiece holder. The gas distributor has a plurality of primary outlets open to the chamber, and the workpiece holder has a process site aligned with the primary outlets. The side unit has a secondary outlet open to the chamber that operates independently of the primary outlets. One of the inner compartment, the side unit and/or the workpiece holder can be movable between a first position to form a small-volume cell for introducing the reactant gases to the microfeature workpiece and a second position to form a large volume space for purging the reactant gases.

    摘要翻译： 一种反应器，包括反应器的系统和用于在微型工件上沉积薄膜的方法，包括具有室的反应容器，附接到反应容器的气体分配器，室中的工件保持器，以及在反应容器中的侧部单元 相对于气体分配器和/或工件保持器的位置。 气体分配器具有多个通向腔室的主要出口，并且工件保持器具有与主出口对准的过程部位。 侧单元具有通向腔室的次级出口，其独立于主出口运行。 内部隔室，侧部单元和/或工件保持器中的一个可以在第一位置之间移动以形成用于将反应物气体引入微特征工件的小容积单元，以及形成用于清洗的大体积空间的第二位置 反应物气体。

    Methods of forming capacitors
    5.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US07329573B2

    公开(公告)日：2008-02-12

    申请号：US11206334

    申请日：2005-08-17

    申请人： Matthew W. Miller ,  Cem Basceri

    发明人： Matthew W. Miller ,  Cem Basceri

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

    摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

    摘要翻译： 形成电容器的方法包括在半导体衬底上形成第一电容器电极。 电容器电介质区域形成在第一电容器电极上。 电容器介质区域具有暴露的氧化物容纳表面。 用至少一种硼烷或硅烷处理电容器电介质区域暴露的含氧化物表面。 第二电容器电极沉积在经处理的含氧化物表面上。 第二电容器电极具有与经处理的含氧化物表面接触的内金属表面。 考虑了其他方面和实现。