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发明授权
US07375390B2 Semiconductor memory device having high electrical performance and mask and photolithography friendliness 有权
具有高电气性能和掩模和光刻友好性的半导体存储器件

Semiconductor memory device having high electrical performance and mask and photolithography friendliness
摘要：
A semiconductor memory device includes a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.
摘要（中）：

半导体存储器件包括多行，每行包括以间距排列的多个有源区，其中相邻行中的有源区相对于间距彼此偏移一半，其中每个有源区之间的距离 在一行中等于相邻行中的活动区域之间的距离。

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