发明授权
- 专利标题： Method for growing thin oxide films
- 专利标题（中）： 生长薄氧化膜的方法
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申请号： US11210240申请日： 2005-08-22
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公开(公告)号： US07377976B2公开(公告)日： 2008-05-27
- 发明人: Mikko Ritala , Antti Rahtu , Markku Leskela , Kaupo Kukli
- 申请人： Mikko Ritala , Antti Rahtu , Markku Leskela , Kaupo Kukli
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 优先权： FI19992223 19991014
- 主分类号： C30B25/18
- IPC分类号： C30B25/18
摘要：
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
公开/授权文献
- US20060068992A1 Method for growing thin oxide films 公开/授权日：2006-03-30
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