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    METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS
    9.
    发明申请
    METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS 有权
    沉积稀土氧化物薄膜的方法

    公开(公告)号：US20090035949A1

    公开(公告)日：2009-02-05

    申请号：US11024515

    申请日：2004-12-28

    申请人： Jaakko Niinisto ,  Matti Putkonen ,  Mikko Ritala ,  Petri Raisanen ,  Antti Niskanen ,  Markku Leskela

    发明人： Jaakko Niinisto ,  Matti Putkonen ,  Mikko Ritala ,  Petri Raisanen ,  Antti Niskanen ,  Markku Leskela

    IPC分类号： H01L21/44

    CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/405

    摘要： The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

    摘要翻译： 本发明涉及通过ALD方法沉积稀土氧化物薄膜，特别是钇，镧和氧化钆薄膜的方法，根据该方法，源化学品是环戊二烯基化合物或稀土金属，特别是钇，镧和 钆。 当沉积压力为1至50毫巴时，氧化钇的合适沉积温度为200至400℃。 当沉积压力在1至50毫巴之间时，氧化镧最合适的沉积温度为160至165℃。

    METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS
    10.
    发明申请
    METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS 有权
    形成导电氧化钛薄膜的方法

    公开(公告)号：US20090297696A1

    公开(公告)日：2009-12-03

    申请号：US12129609

    申请日：2008-05-29

    申请人： Viljami Pore ,  Mikko Ritala ,  Markku Leskela

    发明人： Viljami Pore ,  Mikko Ritala ,  Markku Leskela

    IPC分类号： B05D5/12

    CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

    摘要： The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

    摘要翻译： 本公开涉及通过原子层沉积工艺沉积导电氧化钛膜。 通过包括氧化钛沉积循环和掺杂剂氧化物沉积循环的ALD工艺沉积无定形掺杂的氧化钛膜，随后退火以产生导电结晶锐钛矿膜。 还可以通过首先通过包括氮化钛沉积循环和掺杂氮化物沉积循环的ALD工艺沉积掺杂的氮化钛薄膜并随后氧化氮化物膜以形成掺杂的氧化钛膜来沉积掺杂的氧化钛膜。 掺杂的氧化钛膜可以用于例如电容器结构中。