发明授权
US07384850B2 Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions therein
有权
形成其中具有三维沟道区的互补金属氧化物半导体（CMOS）晶体管的方法
- 专利标题： Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions therein
- 专利标题（中）： 形成其中具有三维沟道区的互补金属氧化物半导体（CMOS）晶体管的方法
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申请号： US11087988申请日： 2005-03-23
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公开(公告)号： US07384850B2公开(公告)日： 2008-06-10
- 发明人: Young-Joon Ahn , Dong-Gun Park , Choong-Ho Lee , Hee-Soo Kang
- 申请人： Young-Joon Ahn , Dong-Gun Park , Choong-Ho Lee , Hee-Soo Kang
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2004-0019754 20040323
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
An integrated circuit device containing complementary metal oxide semiconductor transistors includes a semiconductor substrate and an NMOS transistor having a first fin-shaped active region that extends in the semiconductor substrate. The first fin-shaped active region has a first channel region therein with a first height. A PMOS transistor is also provided. The PMOS transistor has a second fin-shaped active region that extends in the semiconductor substrate. This second fin-shaped active region has a second channel region therein with a second height unequal to the first height.
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